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VS-ETX1506STRL-M3

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-ETX1506S-M3, VS-ETX1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
1
Document Number: 96341
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Hyperfast Rectifier, 15 A FRED Pt
®
FEATURES
• Hyperfast recovery time, extremely low Q
rr
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to
JEDEC
®
-JESD 47
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
PRIMARY CHARACTERISTICS
I
F(AV)
15 A
V
R
600 V
V
F
at I
F
1.55 V
t
rr
(typ.) 18 ns
T
J
max. 175 °C
Package D
2
PAK (TO-263AB), TO-262AA
Circuit configuration Single
D
2
PAK (TO-263AB)
TO-262AA
1
3
2
1
3
2
N/C
Anode
1
3
2
Anode
1
3
Base
cathode
2
N/C
VS-ETX1506S-M3 VS-ETX1506-1-M3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 127 °C 15
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 120
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 15 A - 2.5 3.4
I
F
= 15 A, T
J
= 150 °C - 1.55 2
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 36
μA
T
J
= 150 °C, V
R
= V
R
rated - 40 250
Junction capacitance C
T
V
R
= 600 V - 12 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-ETX1506S-M3, VS-ETX1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
2
Document Number: 96341
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 17 23
ns
I
F
= 15 A, dI
F
/dt = 100 A/μs, V
R
= 30 V - 18 30
T
J
= 25 °C
I
F
= 15 A
dI
F
/dt = 200 A/μs
V
R
= 390 V
-20-
T
J
= 125 °C - 45 -
Peak recovery current I
RRM
T
J
= 25 °C - 2.7 -
A
T
J
= 125 °C - 5.5 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 26 -
nC
T
J
= 125 °C - 130 -
Reverse recovery time t
rr
T
J
= 125 °C
I
F
= 15 A
dI
F
/dt = 800 A/μs
V
R
= 390 V
-32-ns
Peak recovery current I
RRM
-17- A
Reverse recovery charge Q
rr
- 290 - nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
- 1.3 1.51 °C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth, and greased - 0.5 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style D
2
PAK (TO-263AB) ETX1506S
Case style TO-262 ETX1506-1
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5
4.0
1
10
100
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
150 °C
175 °C
25 °C
50 °C
75 °C
125 °C
100 °C
Reverse Current - I
R
(μA)
Reverse Voltage - V
R
(V)
VS-ETX1506S-M3, VS-ETX1506-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 25-Oct-17
3
Document Number: 96341
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Reverse Voltage - V
R
(V)
Junction Capacitance - C
T
(pF)
0 100 200 300 400 500 600
1
10
100
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
Average Forward Current - I
F(AV)
(A)
Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14 16 18 20 22
100
110
120
130
140
150
160
170
180
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 2 4 6 8 10 12 14 16 18 20 22
0
5
10
15
20
25
30
35
40
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-ETX1506STRL-M3

Mfr. #:
Buy VS-ETX1506STRL-M3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 15A 600V Hyperfast 20ns
Lifecycle:
New from this manufacturer.
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