DG411LE, DG412LE, DG413LE
www.vishay.com
Vishay Siliconix
S16-0391-Rev. A, 07-Mar-16
4
Document Number: 78091
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
SPECIFICATIONS
a
(Dual Supply ± 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
UNLESS OTHERWISE
SPECIFIED
V+ = 5 V, V- = -5 V
V
L
= 5 V, V
IN
= 2.4 V, 0.8 V
f
TEMP.
b
TYP.
c
A SUFFIX
LIMITS
-55 °C to +125 °C
D SUFFIX
LIMITS
-40 °C to +85 °C UNIT
MIN.
d
MAX.
d
MIN.
d
MAX.
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full - -5 5 -5 5 V
Drain-Source
On-Resistance
R
DS(on)
V+ = 5 V, V- = -5 V,
I
S
= 10 mA, V
D
= ± 3.5 V
Room 18 - 30 - 30
Full - - 42 - 37
Switch Off
Leakage Current
g
I
S(off)
V+ = 5.5, V- = -5.5 V,
V
D
= ± 4.5 V, V
S
= ± 4.5 V
Room - -1 1 -1 1
nA
Full - -15 15 -10 10
I
D(off)
Room - -1 1 -1 1
Full - -15 15 -10 10
Channel On
Leakage Current
g
I
D(on)
V+ = 5.5 V, V- = -5.5 V,
V
S
= V
D
= ± 4.5 V
Room - -1 1 -1 1
Full - -15 15 -10 10
Digital Control
Input Current, V
IN
Low
e
I
IL
V
IN
under test = 0.8 V Full 0.05 -1.5 1.5 -1 1
μA
Input Current, V
IN
High
e
I
IH
V
IN
under test = 2.4 V Full 0.05 -1.5 1.5 -1 1
Dynamic Characteristics
Turn-On Time
e
t
ON
R
L
= 300, C
L
= 35 pF,
V
S
= ± 3.5 V, see figure 2
Room 17 - 50 - 50
ns
Full - - 70 - 60
Turn-Off Time
e
t
OFF
Room 12 - 35 - 35
Full - - 50 - 40
Break-Before-Make Time
Delay
e
t
D
DG413L only, V
S
= 3.5 V,
R
L
= 300, C
L
= 35 pF
Room 5 - - - -
Charge Injection
e
QV
g
= 0 V, R
g
= 0 , C
L
= 10 nF Room 5.8 - - - - pC
Off Isolation
e
OIRR
R
L
= 50 , C
L
= 5 pF, f = 1 MHz
Room 68 - - - -
dB
Channel-to-Channel
Crosstalk
e
X
TALK
Room 113 - - - -
Source Off Capacitance
e
C
S(off)
f = 1 MHz
Room 5 - - - -
pFDrain Off Capacitance
e
C
D(off)
Room 6 - - - -
Channel On Capacitance
e
C
D(on)
Room 14 - - - -
Power Supplies
Positive Supply Current
e
I+
V
IN
= 0 V or 5 V
Room 0.03 - 1 - 1
μA
Full - - 7.5 - 5
Negative Supply Current
e
I-
Room -0.002 -1 - -1 -
Full - -7.5 - -5 -
Logic Supply Current
e
I
L
Room 0.002 - 1 - 1
Full - - 7.5 - 5
Ground Current
e
I
GND
Room -0.002 -1 - -1 -
Full - -7.5 - -5 -