SI8487DB-T1-E1 Datasheet SI8487DB-T1-E1 | P1-P3

Si8487DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

1

Document Number: 63483

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

P-Channel 30 V (D-S) MOSFET

Marking Code: 8487

Ordering Information:

Si8487DB-T1-E1 (lead (Pb)-free and halogen-free)

FEATURES

• TrenchFET

®

power MOSFET

• Low-on resistance

• Ultra-small 1.6 mm x 1.6 mm maximum outline

• Ultra-thin 0.6 mm maximum height

• Pin compatible to Si8409DB

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Mobile computing, smart phones,

tablet PCs

- Load switch

- Battery switch

- Charger switch

- OVP switch

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC / JEDEC

®

(J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on T

A

= 25 °C.

f. Maximum under steady state conditions is 85 °C/W.

g. Maximum under steady state conditions is 175 °C/W.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() MAX. I

D

(A)

a, e

-30

0.031 at V

GS

= -10 V -7.7

0.035 at V

GS

= -4.5 V -7.3

0.045 at V

GS

= -2.5 V -6.4

MICRO FOOT

®

1.6 x 1.6

Bump Side View

1

G

4

S

D

3

D

2

Backside View

1

1.6 mm

8487

xxx

S

G

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

-30

V

Gate-Source Voltage V

GS

± 12

Continuous Drain Current (T

J

= 150 °C)

T

A

= 25 °C

I

D

-7.7

a

A

T

A

= 70 °C -6.2

a

T

A

= 25 °C -4.9

b

T

A

= 70 °C -4

b

Pulsed Drain Current (t = 300 μs) I

DM

-25

Continuous Source-Drain Diode Current

T

A

= 25 °C

I

S

-2.3

a

T

A

= 25 °C -0.92

b

Maximum Power Dissipation

T

A

= 25 °C

P

D

2.7

a

W

T

A

= 70 °C 1.8

a

T

A

= 25 °C 1.1

b

T

A

= 70 °C 0.73

b

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Package Reflow Conditions

c

V

PR

260

IR / convection 260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYPICAL MAXIMUM UNIT

Maximum Junction-to-Ambient

a, f

t = 5 s R

thJA

35 45

°C/W

Maximum Junction-to-Ambient

b, g

t = 5 s R

thJA

85 110

Si8487DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

2

Document Number: 63483

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width  300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.



Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0 V, I

D

= -250 μA -30 - - V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= -250 μA

--21-

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

-3.3-

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= -250 μA -0.6 - -1.2 V

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 12 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= -30 V, V

GS

= 0 V - - -1

μA

V

DS

= -30 V, V

GS

= 0 V, T

J

= 70 °C - - -10

On-State Drain Current

a

I

D(on)

V

DS

 -5 V, V

GS

= -4.5 V -5 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= -10 V, I

D

= -2 A - 0.025 0.031

V

GS

= -4.5 V, I

D

= -2 A - 0.028 0.035

V

GS

= -2.5 V, I

D

= -1 A - 0.036 0.045

Forward Transconductance

a

g

fs

V

DS

= -10 V, I

D

= -2 A - 16 - S

Dynamic

b

Input Capacitance C

iss

V

DS

= -15 V, V

GS

= 0 V, f = 1 MHz

- 2240 4480

pFOutput Capacitance C

oss

- 200 400

Reverse Transfer Capacitance C

rss

- 165 330

Total Gate Charge Q

g

V

DS

= -15 V, V

GS

= -10 V, I

D

= -2 A - 52 80

nC

V

DS

= -15 V, V

GS

= -4.5 V, I

D

= -2 A

-2540

Gate-Source Charge Q

gs

-4.1-

Gate-Drain Charge Q

gd

-5.7-

Gate Resistance R

g

V

GS

= -0.1 V, f = 1 MHz - 15 30 

Turn-On Delay Time t

d(on)

V

DD

= -15 V, R

L

= 15 

I

D

 -2 A, V

GEN

= -4.5 V, R

g

= 1 

-2550

ns

Rise Time t

r

-2245

Turn-Off Delay Time t

d(off)

- 195 390

Fall Time t

f

-60120

Turn-On Delay Time t

d(on)

V

DD

= -15 V, R

L

= 15 

I

D

 -2 A, V

GEN

= -10 V, R

g

= 1 

-715

Rise Time t

r

-1020

Turn-Off Delay Time t

d(off)

- 290 580

Fall Time t

f

-60120

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode I

S

T

A

= 25 °C - - -2.3

c

A

Pulse Diode Forward Current I

SM

---25

Body Diode Voltage V

SD

I

S

= -2 A, V

GS

= 0 V - -0.75 -1.2 V

Body Diode Reverse Recovery Time t

rr

I

F

= -2 A, dI/dt = 100 A/μs, T

J

= 25 °C

- 86 170 ns

Body Diode Reverse Recovery Charge Q

rr

- 85 170 nC

Reverse Recovery Fall Time t

a

-23-

ns

Reverse Recovery Rise Time t

b

-63-

Si8487DB

www.vishay.com

Vishay Siliconix

S15-1692-Rev. E, 20-Jul-15

3

Document Number: 63483

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 2 V

V

GS

= 5 V thru 2.5 V

V

GS

= 1.5 V

0.01

0.02

0.03

0.04

0.05

0 5 10 15 20 25

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 2.5 V

V

GS

= 4.5 V

V

GS

= 10 V

0

2

4

6

8

10

0 10 20 30 40 50 60

V

GS

- Gate-to-Source Voltage (V)

Q

g

-Total Gate Charge (nC)

V

DS

= 24 V

V

DS

= 7.5 V

V

DS

= 15 V

I

D

= 2 A

0

2

4

6

8

10

0.0 0.5 1.0 1.5 2.0 2.5

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

500

1000

1500

2000

2500

3000

0 5 10 15 20 25 30

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

R

DS(on)

-On-Resistance (Normalized)

T

J

- Junction Temperature (°C)

V

GS

= 2.5 V; I

D

= 1 A

V

GS

= 10 V, 4.5 V; I

D

= 2 A

SI8487DB-T1-E1

SI8487DB-T1-E1

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