ZXMS6005DGTA

ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
4 of 9
www.diodes.com
September 2013
© Diodes Incorporated
ZXMS6005DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Thermal Characteristics
110
10m
100m
1
10
Limited by Over-Current Protection
Single Pulse
T
amb
=25°C
See Note (a)
Limited
by R
DS(on)
1ms
10ms
100ms
1s
DC
Safe Operating Area
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Limit of s/c protection
0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
See Note (a)
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
See Note (b)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
T
amb
=25°C
See Note (a)
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
See Note (a)
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
5 of 9
www.diodes.com
September 2013
© Diodes Incorporated
ZXMS6005DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Static Characteristics
Drain-Source Clamp Voltage
V
DS
(
AZ
)
60 65 70 V
I
D
= 10mA
Off State Drain Current
I
DSS
– –
1
μA
V
DS
= 12V, V
IN
= 0V
– –
2
V
DS
= 36V, V
IN
= 0V
Input Threshold Voltage
V
IN
(
th
)
0.7 1 1.5 V
V
DS
= V
GS
, I
D
= 1mA
Input Current
I
IN
60 100
μA
V
IN
= +3V
120 200
V
IN
= +5V
Input Current While Over Temperature Active
– –
300 μA
V
IN
= +5V
Static Drain-Source On-State Resistance
R
DS(on)
170 250
m
V
IN
= +3V, I
D
= 1A
150 200
V
IN
= +5V, I
D
= 1A
Continuous Drain Current (Note 4)
I
D
1.4
– –
A
V
IN
= 3V; T
A
= +25°C
1.6
– –
V
IN
= 5V; T
A
= +25°C
Continuous Drain Current (Note 5)
1.9
– –
V
IN
= 3V; T
A
= +25°C
2.0
– –
V
IN
= 5V; T
A
= +25°C
Current Limit (Note 7)
I
D(LIM)
2.2 5
A
V
IN
= +3V
3.3 7
V
IN
= +5V
Dynamic Characteristics
Turn On Delay Time
t
d
(
on
)
6
μs
V
DD
= 12V, I
D
= 1A, V
GS
= 5V
Rise Time
t
r
14
Turn Off Delay Time
t
d
(
off
)
34
Fall Time
f
f
19
Over-Temperature Protection
Thermal Overload Trip Temperature (Note 8)
T
JT
150 175
°C –
Thermal Hysteresis (Note 8)
f
f
– 10
°C –
Notes: 7. The drain current is restricted only when the device is in saturation (see graph ‘typical output characteristic’). This allows the device to be used in the fully
on state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
8. Over-temperature protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” normal
operating range, so this part is not designed to withstand over-temperature for extended periods..
ZXMS6005DG
Document number: DS32247 Rev. 1 - 2
6 of 9
www.diodes.com
September 2013
© Diodes Incorporated
ZXMS6005DG
ADVANCE INFORMATION
A Product Line o
f
Diodes Incorporated
IntelliFET
®
is a trademark of Diodes Incorporated, registered in the United States and other jurisdictions worldwide.
Typical Characteristics
0123456789101112
0
1
2
3
4
5
6
7
8
9
-75 -50 -25 0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
2.0 2.5 3.0 3.5 4.0 4.5 5.0
0.0
0.2
0.4
-75 -50 -25 0 25 50 75 100 125 150
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
012345
0
20
40
60
80
100
120
0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
2V
4V
5V
4.5V
3.5V
3V
2.5V
1.5V
Typical Output Characteristic
T
A
= 25°C
V
IN
I
D
Drain Current (A)
V
DS
Drain-Source Voltage (V)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
V
TH
Threshold Voltage (V)
T
J
Junction Temperature (°C)
T
J
= 150°C
On-Resistance vs Input Voltage
T
J
= 25°C
R
DS(on)
On-Resistance ()
V
IN
Input Voltage (V)
I
D
= 1A
Reverse Diode Characteristic
V
IN
= 3V
V
IN
= 5V
On-Resistance vs Temperature
T
J
Junction Temperature (°C)
R
DS(on)
On-Resistance ()
Input Current vs Input Voltage
I
IN
Input Current (A)
V
IN
Input Voltage (V)
V
SD
Source-Drain Voltage (V)
I
S
Source Curent (A)
T
J
=25°C
T
J
=150°C

ZXMS6005DGTA

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
MOSFET 60V N-Ch Intellifet 200mohm 2A 490mJ
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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