BCV71,215

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
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salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DATA SHEET
Product data sheet
Supersedes data of 1997 Mar 11
1999 Apr 08
DISCRETE SEMICONDUCTORS
BCV71; BCV72
NPN general purpose transistors
ook
, halfpage
M3D088
1999 Apr 08 2
NXP Semiconductors Product data sheet
NPN general purpose transistors BCV71; BCV72
FEATURES
Low current (max. 100 mA)
Low voltage (max. 60 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER MARKING CODE
(1)
BCV71 K7
BCV72 K8
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter 80 V
V
CEO
collector-emitter voltage open base; I
C
= 2 mA 60 V
V
EBO
emitter-base voltage open collector 5 V
I
C
collector current (DC) 100 mA
I
CM
peak collector current 200 mA
I
BM
peak base current 200 mA
P
tot
total power dissipation T
amb
25 °C 250 mW
T
stg
storage temperature 65 +150 °C
T
j
junction temperature 150 °C
T
amb
operating ambient temperature 65 +150 °C

BCV71,215

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS GP TAPE-7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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