V = V
A²s
A²s
A²s
A²s
Ratings
I
R
V
I
A
V
F
1,29
R
0,9 K/W
R
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1,5V = V
R
T = 25°C
VJ
I = A
V
T = °C
C
130
P
tot
160 WT = 25°C
C
R
K/W
30
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
1,60
T = 25°C
VJ
150
V
F0
V0,82T = °C
VJ
175
r
F
14,1
mΩ
V1,25T = °C
VJ
I = A
V
30
1,66
I = A
60
I = A
60
threshold voltage
slope resistance
for power loss calculation only
µA
150
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
10
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
R
VJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t
T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0,50
IXYS reserves the right to change limits, conditions and dimensions.
20150402bData according to IEC 60747and per semiconductor unless otherwise specified
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