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MBR160RLG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 8
1 Publication Order Number:
MBR150/D
MBR150, MBR160
MBR160 is a Preferred Device
Axial Lead Rectifiers
The MBR150/160 series employs the Schottky Barrier principle in a
large area metal−to−silicon power diode. State−of−the−art geometry
features epitaxial construction with oxide passivation and metal
overlap contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
MBR150
MBR160
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
60
V
RMS Reverse Voltage MBR150
MBR160
V
R(RMS)
35
42
V
Average Rectified Forward Current (Note 1)
(V
R(equiv)
v 0.2 V
R
(dc), T
L
= 90°C,
R
q
JA
= 80°C/W, P.C. Board Mounting, T
A
= 55°C)
I
O
1.0 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions,
halfwave, single phase, 60 Hz, T
L
= 70°C)
I
FSM
25
(for one
cycle)
A
Operating and Storage Junction Temperature
Range (Reverse Voltage Applied)
T
J
, T
stg
− 65 to
+150
°C
THERMAL CHARACTERISTICS (Notes 1 and 2)
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
80 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Lead Temperature reference is cathode lead 1/32″ from case.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERE − 50 AND 60 VOLT
S
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
MARKING DIAGRAM
A = Assembly Location
MBR1x0 = Device Code
x = 5 or 6
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
A
MBR1x0
YYWW G
G
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MBR150, MBR160
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
L
= 25°C unless otherwise noted) (Note 1)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 0.1 A)
(i
F
= 1.0 A)
(i
F
= 3.0 A)
v
F
0.550
0.750
1.000
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(T
L
= 25°C)
(T
L
= 100°C)
i
R
0.5
5.0
mA
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
Figure 3. Forward Power Dissipation
1.4
v
F
, INSTANTANEOUS VOLTAGE (VOLTS)
10
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
40 700
0.1
0.05
0.001
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
1.00
4.0
2.0
0
2.0
i
F
, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
P
F(AV)
, AVERAGE FORWARD
0.1
0.60.2 0.4 0.8 1.0
50 6010 20 30
10
3.0 4.0 5.0
0
1.6
5.0
3.0
1.0
, REVERSE CURRENT (mA)
R
0.2
0.5
1.0
0.02
0.01
0.005
0.002
T
J
= 150°C
100°C
25°C
I
PK
/I
AV
= 20
SQUARE
WAVE
dc
10
5
T
J
= 150°C
*The curves shown are typical for the highest voltage device in the volt
-
age grouping. Typical reverse current for lower voltage selections can
be estimated from these same curves if V
R
is sufficiently below rated V
R
.
125°C
5.0
2.0
100°C
75°C
25°C
POWER DISSIPATION (WATTS)
1.2
0.07
0.05
0.03
0.02
0.2
0.3
0.5
0.7
2.0
3.0
5.0
7.0
p
MBR150, MBR160
http://onsemi.com
3
THERMAL CHARACTERISTICS
Figure 4. Thermal Response
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k
0.07
0.05
0.03
0.02
0.01
0.1
t, TIME (ms)
0.7
0.5
0.3
0.2
1.0
Z
q
JL(t)
= Z
q
JL
• r(t)
P
pk
P
pk
t
p
t
1
TIME
DUTY CYCLE, D = t
p
/t
1
PEAK POWER, P
pk
, is peak
of an equivalent square
power pulse.
DT
JL
= P
pk
• R
q
JL
[D + (1 − D) • r(t
1
+ t
p
) + r(t
p
) − r(t
1
)] where
DT
JL
= the increase in junction temperature above the lead
temperature r(t) = normalized value of transient thermal resistance
at time, t, from Figure 4, i.e.: r(t) = r(t
1
+ t
p
) = normalized value of
transient thermal resistance at time, t
1
+ t
p
.
.
Figure 5. Steady−State Thermal Resistance Figure 6. Typical Capacitance
3/40
L, LEAD LENGTH (INCHES)
90
80
60
70
50
V
R
, REVERSE VOLTAGE (VOLTS)
50 800
60
40
30
20
R
JL
, THERMAL RESISTANCE,
40
30
20
3/81/8 1/4 1/2 5/8 7/8 1.0 60 7010 20 30 40
50
70
80
10
100
200
C, CAPACITANCE (pF)
q
JUNCTION−TO−LEAD ( C/W)°
BOTH LEADS TO HEATSINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
10090
T
J
= 25°C
f = 1 MHz
NOTE 1. — MOUNTING DATA:
Data shown for thermal resistance junction−to−ambient
(R
qJA)
for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
Typical Values for R
q
JA
in Still Air
Mounting
Method
Lead Length, L (in)
R
q
JA
1/8 1/4 1/2 3/4
1 52 65 72 85 °C/W
2 67 80 87 100 °C/W
3 — 50 °C/W
NOTE 2. — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
T
A(A)
T
A(K)
T
L(A)
T
C(A)
T
J
T
C(K)
T
L(K)
P
D
R
q
S(A)
R
q
L(A)
R
q
J(A)
R
q
J(K
)
R
q
L(K)
R
q
S(K)
P1-P3P4-P5

MBR160RLG

Mfr. #:
Buy MBR160RLG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1A 60V
Lifecycle:
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