IPB100N12S305ATMA1 Datasheet IPB100N12S305ATMA1, IPI100N12S305AKSA1, IPP100N12S305AKSA1 | P1-P3

IPB100N12S3-05

IPI100N12S3-05, IPP100N12S3-05

OptiMOS

®

-T Power-Transistor

Features

• OptiMOS™ - power MOSFET for automotive applications

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green product (RoHS compliant)

• 100% Avalanche tested

Maximum ratings, at T

j

=25 °C, unless otherwise specified

Parameter Symbol Conditions Unit

Continuous drain current

1)

I

D

T

C

=25 °C, V

GS

=10 V

100 A

T

C

=100 °C,

V

GS

=10 V

2)

100

Pulsed drain current

2)

I

D,pulse

T

C

=25 °C

400

Avalanche energy, single pulse

2)

E

AS

I

D

=50A

1445 mJ

Avalanche current, single pulse

I

AS

-

100 A

Gate source voltage

V

GS

- ±20 V

Power dissipation

P

tot

T

C

=25 °C

300 W

Operating and storage temperature

T

j

, T

stg

- -55 ... +175 °C

Value

V

DS

120

V

R

DS(on),max

(SMD version)

4.8

mW

I

D

100

A

Product Summary

PG-TO220-3-1

PG-TO262-3-1

PG-TO263-3-2

Type

Package

Marking

IPB100N12S3-05

PG-TO263-3-2

3PN1205

IPI100N12S3-05

PG-TO262-3-1

3PN1205

IPP100N12S3-05

PG-TO220-3-1

3PN1205

Rev. 1.0 page 1 2016-06-20

IPB100N12S3-05

IPI100N12S3-05, IPP100N12S3-05

Parameter Symbol Conditions Unit

min. typ. max.

Thermal characteristics

2)

Thermal resistance, junction - case

R

thJC

- - - 0.5 K/W

Thermal resistance, junction -

ambient, leaded

R

thJA

- - - 62

SMD version, device on PCB

R

thJA

minimal footprint - - 62

6 cm

2

cooling area

3)

- - 40

Electrical characteristics, at T

j

=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V

(BR)DSS

V

GS

=0 V, I

D

= 1 mA

120 - - V

Gate threshold voltage

V

GS(th)

V

DS

=V

GS

, I

D

=240µA

2.0 3.0 4.0

Zero gate voltage drain current

I

DSS

V

DS

=120 V, V

GS

=0 V,

T

j

=25 °C

- 0.01 1 µA

V

DS

=120 V, V

GS

=0 V,

T

j

=125 °C

2)

- 1 100

Gate-source leakage current

I

GSS

V

GS

=20V, V

DS

=0V

- - 100 nA

Drain-source on-state resistance

R

DS(on)

V

GS

=10V, I

D

=100A

- 4.3 5.1

mW

V

GS

=10V, I

D

=100A,

SMD version

- 4.0 4.8

Values

Rev. 1.0 page 2 2016-06-20

IPB100N12S3-05

IPI100N12S3-05, IPP100N12S3-05

Parameter Symbol Conditions Unit

min. typ. max.

Dynamic characteristics

2)

Input capacitance

C

iss

- 8900 11570 pF

Output capacitance

C

oss

- 2520 3276

Reverse transfer capacitance

C

rss

- 220 330

Turn-on delay time

t

d(on)

- 34 - ns

Rise time

t

r

- 17 -

Turn-off delay time

t

d(off)

- 60 -

Fall time

t

f

- 20 -

Gate Charge Characteristics

2)

Gate to source charge

Q

gs

- 46 61 nC

Gate to drain charge

Q

gd

- 34 51

Gate charge total

Q

g

- 139 185

Gate plateau voltage

V

plateau

- 5.5 - V

Reverse Diode

Diode continous forward current

2)

I

S

- - 100 A

Diode pulse current

2)

I

S,pulse

- - 400

Diode forward voltage

V

SD

V

GS

=0V, I

F

=100A,

T

j

=25°C

0.6 1 1.2 V

Reverse recovery time

2)

t

rr

V

R

=60V, I

F

=50A,

di

F

/dt=100A/µs

- 108 - ns

Reverse recovery charge

2)

Q

rr

- 380 - nC

3)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm

2

(one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1)

Current is limited by bondwire; with an R

thJC

= 0.5K/W the chip is able to carry 165A at 25°C. For detailed

information see Application Note ANPS071E

T

C

=25°C

Values

V

GS

=0V, V

DS

=25V,

f=1MHz

V

DD

=20V, V

GS

=10V,

I

D

=80A, R

G

=3.5W

V

DD

=96V, I

D

=100A,

V

GS

=0 to 10V

2)

Defined by design. Not subject to production test.

Rev. 1.0 page 3 2016-06-20

IPB100N12S305ATMA1

IPB100N12S305ATMA1

Products related to this Datasheet