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1N4151W-E3-18

P1-P3P4-P5
1N4151W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
1
Document Number: 85721
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101
qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature.
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
1N4151W
1N4151W-E3-08 or 1N4151W-E3-18
Single diode A5 Tape and reel
1N4151W-HE3-08 or 1N4151W-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V
R
50 V
Repetitive peak reverse voltage V
RRM
75 V
Average rectified current half wave
rectification with resistive load
(1)
f 50 Hz I
F(AV)
150 mA
Surge current t < 1 s and T
j
= 25 °C I
FSM
500 mA
Power dissipation
(1)
P
tot
410 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
450 K/W
Junction temperature T
j
150 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating temperature range T
op
- 55 to + 150 °C
1N4151W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
2
Document Number: 85721
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 50 mA V
F
1.0 V
Leakage current
V
R
= 50 V I
R
50 nA
V
R
= 20 V, T
j
= 150 °C I
R
50 μA
Reverse breakdown voltage I
R
= 5 μA (pulsed) V
(BR)
75 V
Diode capacitance V
F
= V
R
= 0 V C
D
2pF
Reverse recovery time
I
F
= 10 mA, I
R
= 10 mA
i
R
= 1 mA
t
rr
4ns
I
F
= 10 mA, i
R
= 1 mA
V
R
= 6 V, R
L
= 100
t
rr
2ns
18742
1000
100
10
1
0.1
0.01
I- Forward Current (mA)
F
0 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 20.2
V - Forward Voltage (V)
=100
°
CT
j
25
°
C
F
18662
1
10
100
1000
10000
r - Dynamic Forward Resistance
f
(Ω)
1100.10.01 100
I
F
- Forward Current (mA)
=25
°
CT
j
f=1kHz
200
18743
T
amb
- Ambient Temperature (°C)
1000
800
600
400
200
20 40 60 80 100 120 140 160180
P - Admissible Power Dissipation (mW)
tot
0
0
18664
24680
1.1
1.0
0.9
0.8
0.7
10
C
D
(V
R
)/C
D
(0 V) - Relative Capacitance (pF)
V
R
- Reverse Voltage (V)
=25
°
CT
j
f=1MHz
1N4151W
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 08-May-13
3
Document Number: 85721
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Leakage Current vs. Junction Temperature
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
1
18744
10
100
1000
10000
0 20 40 60 80 100 120 140 160 180 200
I - Leakage Current (nA)
R
T
j
- Junction Temperature (°C)
=50VV
R
ν
/T T = 1/f=t
pp
I
FRM
t
p
T
t
I
ν
=0
0.1
0.2
0.5
10 101
-1
100
10
1
-5
1010
-4
10
-3
10
-2
18709
I - Admissible Repetitive
FRM
Peak Forward Current (A)
t
p
-Pulse Length (s)
P1-P3P4-P5

1N4151W-E3-18

Mfr. #:
Buy 1N4151W-E3-18
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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