www.vishay.com Document Number: 91079
4 S11-1051-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9540S, SiHF9540S
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
3000
2500
2000
1500
0
500
1000
10
0
10
1
Capacitance (pF)
- V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91079_05
Q
G
, Total Gate Charge (nC)
- V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
10
50
40
3020
V
DS
= - 20 V
V
DS
= - 50 V
For test circuit
see figure 13
V
DS
= - 80 V
91079_06
I
D
= - 19 A
600
10
1
10
0
- V
SD
, Source-to-Drain Voltage (V)
- I
SD
, Reverse Drain Current (A)
1.0
5.0
4.03.02.0
25 °C
175 °C
V
GS
= 0 V
91079_07
0.0
100 µs
1 ms
10 ms
Operation in this area limited
by R
DS(on)
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
T
C
= 25 °C
T
J
= 175 °C
Single Pulse
10
2
0.1
2
5
0.1
2
5
1
2
5
10
2
5
25
1
25
10
25
10
2
2
5
10
3
91079_08
10
3
