CAT5111
http://onsemi.com
4
Table 1. OPERATION MODES
INC CS U/D Operation
High to Low Low High Wiper toward R
H
High to Low Low Low Wiper toward R
L
High Low to High X Store Wiper Position
Low Low to High X No Store, Return to Standby
X High X Standby
Figure 3. Potentiometer Equivalent Circuit
C
W
R
L
C
L
C
H
R
WB
R
WI
R
H
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameters Ratings Units
Supply Voltage
V
CC
to GND −0.5 to +7
V
Inputs
CS
to GND −0.5 to V
CC
+0.5
V
INC to GND −0.5 to V
CC
+0.5 V
U/D to GND −0.5 to V
CC
+0.5 V
R
H
to GND −0.5 to V
CC
+0.5 V
R
L
to GND −0.5 to V
CC
+0.5 V
R
WB
to GND −0.5 to V
CC
+0.5 V
Operating Ambient Temperature
Commercial (‘C’ or Blank suffix)
0 to 70
°C
Industrial (‘I’ suffix) −40 to +85 °C
Junction Temperature +150 °C
Storage Temperature −65 to 150 °C
Lead Soldering (10 s max) +300 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. RELIABILITY CHARACTERISTICS
Symbol Parameter Test Method Min Typ Max Units
V
ZAP
(Note 1) ESD Susceptibility MIL−STD−883, Test Method 3015 2000 V
I
LTH
(Notes 1, 2) Latch−Up JEDEC Standard 17 100 mA
T
DR
Data Retention MIL−STD−883, Test Method 1008 100 Years
N
END
Endurance MIL−STD−883, Test Method 1003 1,000,000 Stores
1. This parameter is tested initially and after a design or process change that affects the parameter.
2. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
CC
+ 1 V