V1PM10HM3/H

V1PM10
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
1
Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
Very low profile - typical height of 0.65 mm
Ideal for automated placement
Trench MOS Schottky technology
Low forward voltage drop
Low power loss, high efficiency
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V
I
FSM
25 A
V
F
at I
F
= 1.0 A (125 °C) 0.58 V
T
J
max. 175 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PM10 UNIT
Device marking code 1MB
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current I
F(AV)
1.0 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
25 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +175 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 0.5 A
T
A
= 25 °C
V
F
(1)
0.58 -
V
I
F
= 1.0 A 0.69 0.77
I
F
= 0.5 A
T
A
= 125 °C
0.50 -
I
F
= 1.0 A 0.58 0.66
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
1-
μA
V
R
= 100 V - 50
V
R
= 70 V
T
A
= 125 °C
0.2 -
mA
V
R
= 100 V 0.5 1.5
Typical junction capacitance 4.0 V, 1 MHz C
J
100 - pF
V1PM10
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
2
Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/ R
JA
(2)
Free air, mounted on FR4 PCB, 2 oz. standard footprint, R
JA
- junction to ambient
(3)
Mounted on FR4 PCB, 2 oz. standard footprint, R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Average Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PM10 UNIT
Typical thermal resistance
R
JA
(1)(2)
130
°C/W
R
JM
(3)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V1PM10-M3/H 0.006 H 4500 7" diameter plastic tape and reel
V1PM10HM3/H
(1)
0.006 H 4500 7" diameter plastic tape and reel
0
0.2
0.4
0.6
0.8
1.0
1.2
0 255075100125150175
Average Forward Rectied Current (A)
Mount Temperature (°C)
T
M
measured at cathode terminal
mount typical values
T
M
= 160 °C, R
thJM
= 20 °C/W
T
A
=25 ƱC, R
thJA
=130 °C/W
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.2 0.4 0.6 0.8 1 1.2
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
T
J
= 175 °C
0.00001
0.0001
0.001
0.01
0.1
1
10
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
T
J
= 175 °C
V1PM10
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
3
Document Number: 87664
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
10
100
1000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to ambient
0.106 (2.70)
0.091 (2.30)
0.055 (1.40)
0.047 (1.20)
Cathode Band
MicroSMP
0.030 (0.75)
0.022 (0.55)
0.030 (0.75)
0.022 (0.55)
0.059 (1.50)
0.043 (1.10)
0.039 (0.98)
0.031 (0.78)
0.091 (2.30)
0.083 (2.10)
0.020 (0.50)
0.043
(1.10)
0.011 (0.27)
0.005 (0.12)
0.079
(2.00)
0.032
(0.80)
0.032
(0.80)
Mounting Pad Layout
0.029 (0.73)
0.025 (0.63)

V1PM10HM3/H

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers If 1A Vrrm 100V AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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