OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 sensors@optekinc.com www.optekinc.com
Issue A 12/2010
Page 2 of 4
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
SMT Silicon Phototransistor
OP522
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Storage Temperature Range -40° C to +85° C
Operating Temperature Range -25° C to +85° C
Lead Soldering Temperature 260° C
(1)
Collector-Emitter Voltage 30 V
Collector Current 20 mA
Power Dissipation 75 mW
(2)
Emitter-Collector Voltage 5 V
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4. To Calculate typical collector dark current in µA, use the formula I
CEO
= 10
(0.04 T
A
-3/4)
where T
A
is the ambient temperature in ° C.
Electrical Characteristics (T
A
= 25°C unless otherwise noted)
SYMBOL PARAMETER TYP MAX UNITS CONDITIONS
I
C(ON)
On-State Collector Current mA
V
CE
= 5.0V, E
e
= 5.0mW/cm
2 (3)
V
CE(SAT)
Collector-Emitter Saturation Voltage 0.4 V I
C
= 100µA, E
e
= 2.0mW/cm
2 (3)
I
CEO
Collector-Emitter Dark Current 100 nA V
CE
= 5.0V, E
e
= 0
(4)
V
(BR)CEO
Collector-Emitter Breakdown Voltage V I
C
= 100µA
V
(BR)ECO
Emitter-Collector Breakdown Voltage V I
E
= 100µA
MIN
0.5
30
5
t
r
, t
f
Rise and Fall Times 15 µs I
C
= 1mA, R
L
= 1KΩ
Relative Collector Current
Relative On-State Collector
Current vs. Irradiance
0
1.0 2.0 3.0 4.0
Ee—Irradiance (mW/cm
2
)
Relative Collector Current
80%
100%
120%
140%
160%
Relative On-State Collector Current
vs. Temperature
-25 0 25 50 75 100
Temperature—(°C)
60%
40%
5.0 6.0 7.0
90%
100%
110%
120%
130%
80%
70%
140%
8.0
20%
Normalized at Ee = 5mW/cm
2
Conditions: V
CE
= 5V,
λ = 935nm, T
A
= 25 °C
Normalized at T
A
= 25°C .
Conditions: V
CE
= 5V,
λ = 935nm, T
A
= 25 °C
