ZXTN19100CZTA

P1-P3 P4-P6 P7-P8

ZXTN19100CZ

Issue 1 - February 2008 4 www.zetex.com

© Zetex Semiconductors plc 2008

Thermal characteristics

ZXTN19100CZ

Issue 1 - February 2008 5 www.zetex.com

© Zetex Semiconductors plc 2008

Electrical characteristics (at T

amb

= 25°C unless otherwise stated).

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-Base breakdown

voltage

BV

CBO

200 240 V I

C

= 100μA

Collector-Emitter

breakdown voltage

(forward blocking)

BV

CEX

200 240 V

I

C

= 100

μ

A, R

BE

≤

1k

Ω

or

-1V < V

BE

< 0.25V

Collector-Emitter

breakdown voltage

BV

CEO

100 120 V

I

C

= 10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.

Emitter-Collector

breakdown voltage

(reverse blocking)

BV

ECX

68.3 V

I

E

= 100

μ

A, R

BC

≤

1k

Ω

or

0.25V > V

BC

> -0.25V

Emitter-Collector

breakdown voltage

(reverse blocking)

BV

ECO

58 VI

E

= 100μA

Emitter-Base breakdown

voltage

BV

EBO

78.3 VI

E

= 100μA

Collector-Base cut-off

current

I

CBO

<1 50

0.5

nA

μA

V

CB

= 200V

V

CB

= 200V, T

amb

=100°C

Collector-Emitter cut-off

current

I

CEX

100 nA

V

CE

= 200V, R

BE

≤

1k

Ω

or

-1V < V

BE

< 0.25V

Emitter cut-off current I

EBO

<1 50 nA V

EB

= 5.6V

Collector-Emitter

saturation voltage

V

CE(sat)

50

105

210

65

140

350

mV

mV

mV

I

C

= 1A, I

B

= 100mA

(*)

I

C

= 1A, I

B

= 20mA

(*)

I

C

= 5.25A, I

B

= 525mA

(*)

Base-Emitter saturation

voltage

V

BE(sat)

1000 1075 mV

I

C

= 5.25A, I

B

= 525mA

(*)

Base-Emitter turn-on

voltage

V

BE(on)

930 1025 mV

I

C

= 5.25A, V

CE

= 2V

(*)

Static forward current

transfer ratio

h

FE

200

130

300

200

30

500

I

C

= 100mA, V

CE

= 2V

(*)

I

C

= 1A, V

CE

= 2V

(*)

I

C

= 5.25A, V

CE

= 2V

(*)

Transition frequency f

T

150 MHz

I

C

= 50mA, V

CE

= 10V

f

= 100MHz

Input capacitance C

ibo

305 400 pF

V

EB

= 0.5V, f

= 1MHz

(*)

Output capacitance C

obo

15.7 25 pF

V

CB

= 10V, f

= 1MHz

(*)

Delay time t

d

28.3 ns

I

C

= 500mA, V

CC

= 10V,

I

B1

= -I

B2

= 50mA

Rise time t

r

23.6 ns

Storage time t

s

962 ns

Fall time t

f

133 ns

ZXTN19100CZ

Issue 1 - February 2008 6 www.zetex.com

© Zetex Semiconductors plc 2008

Typical characteristics

P1-P3 P4-P6 P7-P8

ZXTN19100CZTA

Mfr. #:

Buy ZXTN19100CZTA

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT NPN 100V 5.25A

Lifecycle:

New from this manufacturer.

Delivery:

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ZXTN19100CZTA