Nexperia
PMPB10XNEA
20 V, N-channel Trench MOSFET
V
GS
(V)
0.0 2.01.50.5 1.0
017aaa901
12
24
36
I
D
(A)
0
T
j
= 25 °CT
j
= 150 °C
V
DS
> I
D
× R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
T
j
(°C)
-60 1801200 60
017aaa902
1.0
1.2
0.8
1.4
1.6
a
0.6
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
T
j
(°C)
-60 1801200 60
017aaa903
0.4
0.8
1.2
V
GS(th)
(V)
0.0
min
typ
max
I
D
= 0.25 mA; V
DS
= V
GS
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
017aaa904
V
DS
(V)
10
-1
10
2
101
10
3
10
4
C
(pF)
10
2
C
iss
C
oss
C
rss
f = 1 MHz; V
GS
= 0 V
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
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©
Nexperia B.V. 2018. All rights reserved
Product data sheet 27 March 2018 8 / 14
