IR2308PBF

Typical Connection
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Outputs in phase with inputs
Logic and power ground +/- 5V offset.
Internal 540ns dead-time
Lower di/dt gate driver for better noise immunity
Also available LEAD_FREE
Data Sheet No. PD60209 revC
IR2308
(
S
) & (PbF)
www.irf.com 1
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections
only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Description
The IR2308(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rug-
gedized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse
current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an
N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Part
Input
logic
Cross-
conduction
prevention
logic
Dead-Time Ground Pins
2106
COM
21064
HIN/LIN no none
VSS/COM
2108
Internal 540ns COM
21084
HIN/LIN yes
Programmable 0.54~5
µ
s
VSS/COM
2109 Internal 540ns COM
21094
IN/SD yes
Programmable 0.54~5 µs
VSS/COM
2106//2108//2109/2304/2308 Feature Comparison
2304
HIN/LIN
yes
Internal 100ns
COM
2308
yesHIN/LIN
Internal 540ns COM
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
Packages
8-Lead SOIC - IR2308S
Also available
LEAD-FREE (PbF)
8-Lead PDIP
IR2308
2 www.irf.com
IR2308(S) & (PbF)
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN & LIN ) V
SS
- 0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -50 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
V
°C
°C/W
W
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
and V
SS
offset rating are tested with all supplies biased at 15V differential.
VB High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage COM V
CC
T
A
Ambient temperature -40 125
V
Symbol Definition Min. Max. Units
°C
www.irf.com 3
IR2308(S) & (PbF)
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, DT= V
SS
and T
A
= 25°C unless otherwise specified. The V
IL
, V
IH
and I
IN
parameters are referenced to V
SS
/COM and are applicable to the respective input leads: HIN and LIN. The V
O
, I
O
and Ron
parameters are referenced to COM and are applicable to the respective output leads: HO and LO.
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage for HIN & LIN 2.9 V
CC
= 10V to 20V
V
IL
Logic “0” input voltage for HIN & LIN 0.8 V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
0.8 1.4 I
O
= 20 mA
V
OL
Low level output voltage, V
O
0.3 0.6 I
O
= 20 mA
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 20 60 150 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 0.4 1.0 1.6 mA V
IN
= 0V or 5V
I
IN+
Logic “1” input bias current 5 20 HIN = 5V, LIN = 5V
I
IN-
Logic “0” input bias current 1 2 HIN = 0V, LIN = 0V
V
CCUV+
V
CC
and V
BS
supply undervoltage positive going 8.0 8.9 10
V
BSUV+
threshold
V
CCUV-
V
CC
and V
BS
supply undervoltage negative going 7.4 8.2 9.0
V
BSUV-
threshold
V
CCUVH
Hysteresis 0.3 0.7
V
BSUVH
I
O+
Output high short circuit pulsed current 97 200 V
O
= 0V,
PW10 µs
I
O-
Output low short circuit pulsed current 250 350 V
O
= 15V,
PW10 µs
V
µA
µA
V
mA
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, V
SS
= COM, C
L
= 1000 pF, T
A
= 25°C, DT = VSS unless otherwise specified.
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 220 300 V
S
= 0V
t
off
Turn-off propagation delay 200 280 V
S
= 0V or 600V
MT Delay matching
|
t
on
- t
off
|
—0 46
t
r
Turn-on rise time 150 220 V
S
= 0V
t
f
Turn-off fall time 50 80 V
S
= 0V
DT Deadtime: LO turn-off to HO turn-on(DT
LO-HO) &
400 540 680
HO turn-off to LO turn-on (DT
HO-LO)
MDT Deadtime matching =
|
DT
LO-HO
- DT
HO-LO
|
—0 60
nsec

IR2308PBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Gate Drivers Half Bridge Drvr Hi Volt & Hi Speed
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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