1/4
®
BAT41
SMALL SIGNAL SCHOTTKY DIODE
October 2001 - Ed: 1B
DO-35
Symbol Parameter Value Unit
V
RRM
Repetitive Peak Reverse Voltage 100 V
I
F
Forward Continuous Current* T
a
= 25°C 100 mA
I
FRM
Repetitive Peak Forward Current* t
p
≤ 1s
δ ≤ 0.5
350 mA
I
FSM
Surge non Repetitive Forward Current*
t
p
≤ 10ms
750 mA
P
tot
Power Dissipation* T
a
= 95°C 100 mW
T
stg
T
j
Storage and Junction Temperature Range - 65 to +150
- 65 to +125
°C
°C
T
L
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
230
°C
ABSOLUTE RATINGS (limiting values)
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 300 °C/W
THERMAL RESISTANCE
* On infinite heatsink with 4mm lead length
* * Pulse test: t
p
≤ 300µs δ<2%.
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
T
j
= 25°C I
R
= 100µA
100 V
V
F
* *
T
j
= 25°CI
F
= 1mA
0.4 0.45 V
T
j
= 25°CI
F
= 200mA
1
I
R
* *
T
j
= 25°C
V
R
= 50V
0.1
µA
T
j
= 100°C 20
STATIC CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
j
= 25°C V
R
= 1V f = 1MHz 2 pF
DYNAMIC CHARACTERISTICS
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
DESCRIPTION
