OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ABA-51563-TR2G

P1-P3P4-P6P7-P7
ABA-51563
3.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Description
Avago’s ABA-51563 is an economical, easy-to-
use, internally 50-ohm matched silicon monolithic
broadband amplifier that offers excellent gain and flat
broadband response from DC to 3.5 GHz. Packaged in
an ultraminiature industry-standard SOT-363 package, it
requires half the board space of a SOT-143 package.
At 2 GHz, the ABA-51563 offers a small-signal gain of
21.5 dB, output P1dB of 1.8 dBm and 11.4 dBm output
third order intercept point. It is suitable for use as buffer
amplifiers for wideband applications. They are designed
for low cost gain blocks in cellular applications, DBS tuners,
LNB and other wireless communications systems.
ABA-51563 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused single
polysilicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high
f
T
and high NPN breakdown (25 GHz f
T
at 6V BVCEO). The
process utilizes industry standard device oxide isolation
technologies and submicron aluminum multilayer
interconnect to achieve superior performance, high
uniformity, and proven reliability.
Features
• Operating frequency: DC ~ 3.5 GHz
• 21.5 dB gain
• VSWR < 2.0 throughout operating frequency
• 1.8 dBm output P1dB
• 3.7 dB noise figure
• Unconditionally stable
• Single 5V supply (Id = 18 mA)
• Lead-free option available
Applications
•
Amplifier for cellular, cordless, special mobile radio, PCS,
ISM, wireless LAN, DBS, TVRO, and TV tuner applications
Surface Mount Package: SOT-363/SC70
Pin Connections and Package Marking Simplified Schematic
Note:
Top View. Package marking provides orientation and identification.
“x” is character to identify date code.
Vcc
GND 3
AHx
Input
GND 1
GND 2
Output
& Vcc
Vcc
Ground 1
Ground 2
Ground 3
RF
Input
RF
Output
& Vcc
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ABA-51563 Absolute Maximum Ratings
[1]
Symbol Parameter Units Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25°C) V +7
P
in
CW RF Input Power (Vcc = 5V) dBm +20
P
diss
Total Power Dissipation
[3]
W 0.3
T
j
Junction Temperature °C 150
T
STG
Storage Temperature °C -65 to 150
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 2.3 mW/°C for Tb
> 120.8°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50 Ω, P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
Gp
[1]
Power Gain (|S
21
|
2
) dB 20 21.5 0.2
∆Gp Power Gain Flatness, f = 0.1 ~ 2.5 GHz dB 1.0
f = 0.1 ~ 3.5 GHz 1.3
NF
[1]
Noise Figure dB 3.7 4 0.12
P1dB
[1]
Output Power at 1dB Gain Compression dBm 1.8 0.13
OIP3
[1]
Output Third Order Intercept Point dBm 11.4 0.24
VSWR
in
[1]
Input VSWR 1.2
VSWR
out
[1]
Output VSWR 1.2
Icc
[1]
Device Current mA 18 28 0.3
td
[1]
Group Delay ps 140
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
Figure 1. ABA-51563 Production Test Circuit.
RF Outpu
t
RF Input
Vcc
RFC
C
block
C
block
C
bypass
AHx
Thermal Resistance
[2]
(Vcc = 5V)
θ
jc
= 104°C/W
3
ABA-51563 Typical Performance
T
c
= +25°C, Z
o
= 50Ω, V
cc
= 5V unless stated otherwise.
FREQUENCY (GHz)
Figure 9. Output IP3 vs. Frequency and
Temperature.
OIP3 (dBm)
0
16
12
8
4
0
41
0.5
2 2.5 31.5 3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
OIP3 (dBm)
0
20
16
12
8
4
0
41
0.5
2 2.5 31.5
3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5
2 2.5 31.5
3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
P1dB (dBm)
0
6
4
2
0
-2
-4
-6
41
0.5
2 2.5 31.5
3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
NF (dB)
0
6
5
4
3
2
41
0.5
2 2.5 31.5
3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 4. Noise Figure vs. Frequency and
Voltage.
NF (dB)
0
4.5
4
3.5
3
2.5
41
0.5
2 2.5 31.5
3.5
4.5V
5V
5.5V
FREQUENCY (GHz)
Figure 3. Gain vs. Frequency and Temperature.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5
2 2.5 31.5
3.5
-40C
+25C
+85C
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
GAIN (dB)
0
23
22
21
20
19
18
17
41
0.5
2 2.5 31.5
3.5
4.5V
5V
5.5V
P1-P3P4-P6P7-P7

ABA-51563-TR2G

Mfr. #:
Buy ABA-51563-TR2G
Manufacturer:
Broadcom / Avago
Description:
RF Amplifier DC - 3.5 GHz 21.5dB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet