VDD
IOUT
TSTG
+6.5
+0.5
+125
ー0.3
ー0.5
ー55
V
mA
℃
V
DD
Ta
5.5
+85
V
℃
1.851.6
ー30
I
DD
VOH
VOL
TPD1
T
PD2
9
0.4
100
292
6.5
50
146
V
DD
ー0.4
25
73
μA
V
V
ms
μs
I
OUT
=ー0.5mA
I
OUT =+0.5mA
BopN
BopS
BrpN
BrpS
BhN,BhS
3.2
ー1.4
3.0
ー1.2
2.5
ー2.5
2.0
ー2.0
0.5
1.4
ー3.2
1.2
ー3.0
0.1
mT
mT
mT
mT
mT
BopN
BopS
BrpN
BrpS
BhN,BhS
3.9
*
ー1.3
*
3.7
ー0.9
2.5
ー2.5
2.0
ー2.0
0.5
*
1.3
ー3.9
0.9
*
ー3.7
*
0.1
mT
mT
mT
mT
mT
●Electrical Characteristics
●Magnetic Characteristics①
●Magnetic Characteristics②
Item
Typ.
Unit
symbol
Min. NoteMax.
Item
Typ.
Unit
symbol
Min. Max.
Item
Typ.
Unit
symbol
Min.
Max.
High level output voltage
Low level output voltage
Pulse drive period
Pulse drive time
Current consumption
Note) The above specifications are guaranteed by design.
Releasing points
H y s t e r e s i s
Operating points
Note) The characteristics with *marks are guaranteed by design.
Releasing points
H y s t e r e s i s
Operating points
(Ta=25℃ VDD =1.85V)
(Ta=25℃ V
DD =1.85V)
(Ta=−30∼+85℃ V
DD =1.6∼5.5V)
●Absolute Maximum Ratings
●Recommended Operating Conditions
Item tinU.niM
symbol
Max.
Storage temperature
Item
Typ.
Unit
symbol
Min.
Max.
Output current
Power supply voltage
Note) Stresses beyond these listed values may cause permanent damage to the device.
Operating temperature
Power supply voltage
Average
26
•Please be aware that our products are not intended for use in life support equipment, devices, or systems. Use of our products in such applications requires the
advance written approval of our sales staff.
Certain applications using semiconductor devices may involve potential risks of personal injury, property damage or loss of life. In order to minimize these risks,
adequate design and operating safeguards should be provided by the customer to minimize inherent or procedural hazards. Inclusion of our products in such
applications is understood to be fully at the risk of the customer using our devices or systems.
AK8789
a
f
k
n
o
p