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DB5S406K0R

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB5S406K0R
Absolute Maximum Ratings Ta = 25 °C
Note: *1 Value of each diode in double used.
*2 The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Page
VR
IFM
Reverse voltage
Forward current (Average)
Singie
Doubie
*1
Peak forward current
Singie
Doubie
*1
V
mA
Non-repetitive peak Singie
IF
IFSM
mA
Doubie
*1
40
forward surge current
*2
+85
V
100
°C
75
A
0.75
1
300
225
Basic Part Number :
Dual DB2S406 (Parallel)
Repetitive peak reverse voltage VRRM 40
Packaging
Embossed type (Thermo-compression sealing) : 8 000 pcs / reel (standard)
Code
1. Anode1
2. N.C.
SOT-665
Panasonic SSMini5-F4-B
JEITA SC-107BB
DB5S406K0
R
Silicon epitaxial planar type
For high speed switching circuits
DB4J406K in SSMini5 type package
Features
Short reverse recovery time trr
Small reverse current IR
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
4B
y
y
y
3. Anode2
4. Cathode2
5. Cathode1
Unit: mm
Internal Connection
1of4
UnitParameter Symbol Rating
Junction temperature Tj 125 °C
Storage temperature Tstg
-40 toToprOperating ambient temperature
°C-55 to +125
123
54
1.6
1.6
(0.6)
1.2
0.130.2
1.0
(0.5)(0.5)
123
45
Doc No.
TT4-EA-12509
Revision.
3
Established
:
2010-04-05
:
2013-12-13
Product Standards
Schottky Barrier Diode
DB5S406K0R
Electrical Characteristics Ta = 25 °C ± 3 °C
Note: 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring
methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
3. the charge of a human body and the leakage of current from the operating equipment.
Absolute frequency of input and output is 250 MHz.
4. *1 trr test circuit
Page
µAIR VR = 40 V
0.35
V
VF1 IF = 1 mA
VF2
Forward voltage
Reverse recovery time
*1
trr
Reverse current
IF = 100 mA
0.9
RL = 100
Ω
Typ
IF = IR = 100 mA, Irr = 10 mA
2.2
Parameter Symbol Conditions Min UnitMax
of 4
5
2
0.60
ns
pFTerminal capacitance Ct VR = 10 V, f = 1 MHz
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-12509
Revision.
3
Established
:
2010-04-05
:
2013-12-13
Product Standards
Schottky Barrier Diode
DB5S406K0R
Technical Data ( reference )
Page 3 of 4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Forward voltage VF (V)
Forward current IF (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
IR - VR
1.E-10
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
0 10203040
Reverse voltage VR (V)
Reverse current IR (A)
-40 ℃
25 ℃
85 ℃
Ta = 125 ℃
Ct - VR
0
2
4
6
8
10
12
14
16
0 10203040
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 ℃
f = 1 MHz
Doc No.
TT4-EA-12509
Revision.
3
Established
:
2010-04-05
:
2013-12-13
P1-P3P4-P5

DB5S406K0R

Mfr. #:
Buy DB5S406K0R
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x1.6mm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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