© Semiconductor Components Industries, LLC, 2009
August, 2009 − Rev. 1
1 Publication Order Number:
NTMS4800N/D
NTMS4800N
Power MOSFET
30 V, 8 A, N−Channel, SOIC−8
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• SOIC−8 Surface Mount Package Saves Board Space
• This is a Pb−Free Device
Applications
• DC−DC Converters
• Printers
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
6.4
A
T
A
= 70°C 5.1
Power Dissipation R
q
JA
(Note 1)
T
A
= 25°C P
D
1.29 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
I
D
4.9
A
T
A
= 70°C 3.9
Power Dissipation R
q
JA
(Note 2)
T
A
= 25°C P
D
0.75 W
Continuous Drain
Current R
q
JA
, t < 10 s
(Note 1)
T
A
= 25°C
I
D
8.0
A
T
A
= 70°C 6.4
Power Dissipation
R
q
JA
, t < 10 s (Note 1)
T
A
= 25°C P
D
2.0 W
Pulsed Drain Current
T
A
= 25°C, t
p
= 10 ms
I
DM
32 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
+150
°C
Source Current (Body Diode) I
S
2.0 A
Single Pulse Drain−to−Source Avalanche Energy
(T
J
= 25°C, V
DD
= 30 V, V
GS
= 10 V,
I
L
= 11 A
pk
, L = 1.0 mH, R
G
= 25 W)
E
AS
60.5 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for t = 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
97
°C/W
Junction−to−Ambient – t < 10 s (Note 1)
R
q
JA
62.5
Junction−to−Foot (Drain)
R
q
JF
25
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
167
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad, 1 oz Cu
2. Surface−mounted on FR4 board using the minimum recommended pad size
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
V
(BR)DSS
R
DS(ON)
MAX I
D
MAX
30 V
20 mW @ 10 V
8 A
N−Channel
D
S
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
27 mW @ 4.5 V
NTMS4800NR2G SOIC−8
(Pb−Free)
2500/Tape & Reel
4800N
AYWWG
G
4800N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
(Note: Microdot may be in either location)
