47
VTP Process Photodiodes VTP100H
PRODUCT DESCRIPTION
Planar silicon photodiode in a molded plastic
sidelooker package. The package material is
infrared transmitting (blocking visible light).
These diodes exhibit low dark current and fast
speed of response.
PACKAGE DIMENSIONS inch (mm)
CASE 52 FLAT SIDELOOKER
CHIP ACTIVE AREA: .012 in
2
(7.45 mm
2
)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: -40°C to 100°C
Operating Temperature: -40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, pages 45-46)
SYMBOL CHARACTERISTIC TEST CONDITIONS
VTP100H
UNITS
Min. Typ. Max.
I
SC
Short Circuit Current H = 100 fc, 2850 K 35 55 µA
TC I
SC
I
SC
Temperature Coefficient 2850 K .24 %/°C
V
OC
Open Circuit Voltage H = 100 fc, 2850 K 300 mV
TC V
OC
V
OC
Temperature Coefficient 2850 K -2.0 mV/°C
I
D
Dark Current H = 0, VR = 10 V 30 nA
R
SH
Shunt Resistance H = 0, V = 10 mV .25 GΩ
C
J
Junction Capacitance H = 0, V = 3 V 50 pF
Re Responsivity 940 nm .036 .047 A/(W/cm
2
)
S
R
Sensitivity @ Peak .50 A/W
λ
range
Spectral Application Range 725 1150 nm
λ
p
Spectral Response - Peak 925 nm
V
BR
Breakdown Voltage 30 140 V
θ
1/2
Angular Resp. - 50% Resp. Pt. ±70 Degrees
NEP Noise Equivalent Power 2.5 x 10
-14
(Typ.)
D* Specific Detectivity 1.1 x 10
13
(Typ.)
WHz⁄
cm Hz W⁄
Excelitas Technologies, 22001 Dumberry, Vaudreuil, QC, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.excelitas.com
