2DD2150R-13 Datasheet 2DD2150R-13 | P1-P3

2DD2150R

Document number: DS31148 Rev. 4 - 6

1 of 4

www.diodes.com

December 2011

2DD2150R

PART OBSOLETE - USE FCX619

OBSOLETE – PART DISCONTINUED

NPN SURFACE MOUNT TRANSISTOR

Features

• Epitaxial Planar Die Construction

• Ideally Suited for Automated Assembly Processes

• Ideal for Medium Power Switching or Amplification Applications

• Lead Free By Design/RoHS Compliant (Note 1)

• "Green" Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT89-3L

• Case Material: Molded Plastic, "Green” Molding Compound.

UL Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Marking Information: See Page 3

• Ordering Information: See Page 3

• Weight: 0.055 grams (approximate)

Maximum Ratings @T

A

= 25°C unless otherwise specified

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

40 V

Collector-Emitter Voltage

V

CEO

20 V

Emitter-Base Voltage

V

EBO

6 V

Peak Pulse Current

I

CM

5 A

Continuous Collector Current

I

C

3 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 3) @ T

A

= 25°C P

D

1 W

Thermal Resistance, Junction to Ambient Air (Note 3) @ T

A

= 25°C

R

θ

JA

125 °C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150 °C

Electrical Characteristics @T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Conditions

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

V

(

BR

)

CBO

40

⎯ ⎯

V

I

C

= 50μA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(

BR

)

CEO

20

⎯ ⎯

V

I

C

= 1mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(

BR

)

EBO

6

⎯ ⎯

V

I

E

= 50μA, I

C

= 0

Collector Cut-Off Current

I

CBO

⎯ ⎯

0.1

μA

V

CB

= 30V, I

E

= 0

Emitter Cut-Off Current

I

EBO

⎯ ⎯

0.1

μA

V

EB

= 5V, I

C

= 0

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

V

CE

(

SAT

)

⎯

0.2 0.5 V

I

C

= 2A, I

B

= 0.1A

DC Current Gain

h

FE

180

⎯

390

⎯ I

C

= 100mA, V

CE

= 2V

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

f

T

⎯

160

⎯

MHz

V

CE

= 2V, I

E

= -0.1A

f = 100MHz

Output Capacitance

C

ob

⎯

28

⎯

pF

V

CB

= 10V, I

E

= 0,

f = 1MHz

Notes: 1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

Top View

Device Schematic Pin Out Configuration

4

3

2

1

C

B

E

TOP VIEW

3

1

2,4

COLLECTOR

EMITTE

R

BASE

2DD2150R

Document number: DS31148 Rev. 4 - 6

2 of 4

www.diodes.com

December 2011

2DD2150R

PART OBSOLETE - USE FCX619

OBSOLETE – PART DISCONTINUED

0

0.2

0.4

0.6

0.8

1.0

1.2

0

25 50 75 100 125 150 175

P

,

P

O

WE

R

DISSI

P

A

T

I

O

N

(W)

D

T , AMBIENT TEMPERATURE (°C)

Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)

A

0.0

0.5

1.0

1.5

2.0

2.5

012345

V , COLLECTOR EMITTER VOLTAGE (V)

CE

I , COLLECTOR CURRENT (A)

C

Fig. 2 Typical Collector Current vs.Collector-Emitter Voltage

I = 2mA

B

I = 4mA

B

I = 6mA

B

I = 8mA

B

I = 10mA

B

0

50

100

150

200

250

300

350

400

450

500

0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

h , DC CURRENT GAIN

FE

Fig. 3 Typical DC Current Gain

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = 2V

CE

0

0.1

0.2

0.3

0.4

0.0001 0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

V , COLLECTOR EMITTER

SATURATION VOLTAGE (V)

CE(SAT)

Fig. 4 Typical Collector-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 20

CB

0.0001

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

V , BASE EMITTER TURN-ON VOLTAGE (V)

BE(ON)

Fig. 5 Typical Base-Emitter Turn-On Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V = 2V

CE

0.0001

0

0.2

0.4

0.6

0.8

1.0

1.2

0.001 0.01 0.1 1 10

I , COLLECTOR CURRENT (A)

C

V , BASE EMITTER SATURATION VOLTAGE (V)

BE(SAT)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I/I = 20

CB

2DD2150R

Document number: DS31148 Rev. 4 - 6

3 of 4

www.diodes.com

December 2011

2DD2150R

PART OBSOLETE - USE FCX619

OBSOLETE – PART DISCONTINUED

0

20

40

60

80

100

0 5 10 15 20 25 30

V , REVERSE VOLTAGE (V)

R

C , OUTPUT CAPACITANCE (pF)

obo

Fig. 7 Typical Output Capacitance Characteristics

f = 1MHz

0

25

50

75

100

125

150

175

0 20406080100

I , EMITTER CURRENT (mA)

C

f , GAIN-BANDWIDTH PRODUCT (MHz)

T

Fig. 8 Typical Gain-Bandwidth Product vs. Emitter Current

V = 2V

f = 100MHz

CE

Ordering Information (Note 5)

Part Number Case Packaging

2DD2150R-13 SOT89-3L 2500/Tape & Reel

Notes: 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information

Package Outline Dimensions

SOT89-3L

Dim Min Max

A 1.40 1.60

B 0.44 0.62

B1 0.35 0.54

C 0.35 0.43

D 4.40 4.60

D1 1.52 1.83

E 2.29 2.60

e 1.50 Typ

e1 3.00 Typ

H 3.94 4.25

L 0.89 1.20

All Dimensions in mm

N33R = Product Type Marking Code

= Manufacturer’s Marking Code

YWW = Date Code Marking

Y = Last digit of year (ex: 7 = 2007)

WW = Week code 01 - 53

N33R

YWW

e

D

H

L

A

C

E

8

°

(

4

X

)

B1

B

D1

R

0

.

2

0

e1

2DD2150R-13

2DD2150R-13

Products related to this Datasheet