© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 3
1 Publication Order Number:
NTMS4706N/D
NTMS4706N
Power MOSFET
30 V, 10.3 A, Single N−Channel, SO−8
Features
• Low R
DS(on)
• Low Gate Charge
• Standard SO−8 Single Package
• Pb−Free Package is Available
Applications
• Notebooks, Graphics Cards
• Synchronous Rectification
• High Side Switch
• DC−DC Converters
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
±20 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25°C
I
D
8.6
A
T
A
= 85°C 6.2
t v 10 s T
A
= 25°C 10.3
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.5
W
t v 10 s 2.2
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
I
D
6.4
A
T
A
= 85°C 4.6
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.83 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
31 A
Operating Junction and Storage Temperature T
J
,
T
stg
−55 to
150
°C
Source Current (Body Diode) I
S
2.1 A
Single Pulse Drain−to−Source Avalanche Energy
(V
DD
= 25 V, V
GS
= 10 V, I
L
Peak = 7.5 A,
L = 10 mH, R
G
= 25 W)
E
AS
150 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
83.5
°C/W
Junction−to−Ambient – t v 10 s (Note 1)
R
q
JA
58
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NTMS4706NR2 SO−8 2500/Tape & Reel
V
(BR)DSS
R
DS(ON)
TYP I
D
MAX
(Note 1)
30 V
9.0 mW @ 10 V
10.3 A
N−Channel
D
S
G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SO−8
CASE 751
STYLE 12
MARKING DIAGRAM/
PIN ASSIGNMENT
1
11.4 mW @ 4.5 V
NTMS4706NR2G SO−8
(Pb−Free)
2500/Tape & Reel
4706N
ALYWG
G
4706N = Device Code
A = Assembly Location
L = WaferLot
Y = Year
WW = Work Week
G = Pb−Free Package
18
Drain
Drain
Drain
Drain
Source
Source
Source
Gate
Top View
(Note: Microdot may be in either location)
