Type
I
RM
@ V
RM
I
R
@ V
R
C
max. max. typ.
note
µ
AV
µ
AVpF
TLP140M/G/G-1
5 120 50 140 35
TLP200M/G/G-1
5 180 50 200 35
TLP270M/G/G-1
5 230 50 270 35
Note :
V
R
= 50 V bias, V
RMS
= 1V, F = 1 MHz.
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING
(T
amb
= 25°C)
Type
I
RM
@ V
RM
I
R
@ V
R
V
BO
@
I
BO
IH C @ V
R
max.
max. max. max. min. typ.
note 1 note 2 note 3 note 4 note 5
µ
AV
µ
AV VmAmApFpF
TLP140M/G/G-1
5 120 50 140 200 500 150 110 40
TLP200M/G/G-1
5 180 50 200 290 500 150 110 40
TLP270M/G/G-1
5 230 50 270 400 500 150 110 40
Note 1:
I
R
measured at V
R
guarantees V
BR min
> V
R
.
Note 2:
Measured at 50 Hz.
Note 3:
See functional holding current test circuit.
Note 4:
V
R
= 0V bias, V
RMS
= 1V, F = 1 MHz.
Note 5:
V
R
= 50V bias, V
RMS
= 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (T
amb
= 25°C)
Symbol Parameter Value Unit
Rth (j-c) Junction to case TLPxxM
TLPxxG
TLPxxG-1
1.0
1.0
1.0
°
C/W
Rth (j-a) Junction to ambient TLPxxM
TLPxxG
TLPxxG-1
see table page 14
see table page 14
see table page 14
°
C/W
THERMAL RESISTANCE
TLPxxM/G/G-1
4/14