Type
I
RM
@ V
RM
I
R
@ V
R
C
max. max. typ.
note
µ
AV
µ
AVpF
TLP140M/G/G-1
5 120 50 140 35
TLP200M/G/G-1
5 180 50 200 35
TLP270M/G/G-1
5 230 50 270 35
Note :
V
R
= 50 V bias, V
RMS
= 1V, F = 1 MHz.
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND RING
(T
amb
= 25°C)
Type
I
RM
@ V
RM
I
R
@ V
R
V
BO
@
I
BO
IH C @ V
R
max.
max. max. max. min. typ.
note 1 note 2 note 3 note 4 note 5
µ
AV
µ
AV VmAmApFpF
TLP140M/G/G-1
5 120 50 140 200 500 150 110 40
TLP200M/G/G-1
5 180 50 200 290 500 150 110 40
TLP270M/G/G-1
5 230 50 270 400 500 150 110 40
Note 1:
I
R
measured at V
R
guarantees V
BR min
> V
R
.
Note 2:
Measured at 50 Hz.
Note 3:
See functional holding current test circuit.
Note 4:
V
R
= 0V bias, V
RMS
= 1V, F = 1 MHz.
Note 5:
V
R
= 50V bias, V
RMS
= 1V, F = 1 MHz (TIP or RING (-) / GND (+)).
ELECTRICAL CHARACTERISTICS BETWEEN TIP AND GND, RING AND GND (T
amb
= 25°C)
Symbol Parameter Value Unit
Rth (j-c) Junction to case TLPxxM
TLPxxG
TLPxxG-1
1.0
1.0
1.0
°
C/W
Rth (j-a) Junction to ambient TLPxxM
TLPxxG
TLPxxG-1
see table page 14
see table page 14
see table page 14
°
C/W
THERMAL RESISTANCE
TLPxxM/G/G-1
4/14
FUNCTIONAL HOLDING CURRENT (I
H
) TEST CIRCUIT: GO-NO GO TEST
R
-V
P
V
BAT
- 48 V
=
Surge
generator
D.U.T.
This is a GO-NO GO test which allows to confirm the holding current (I
H
) level in a functional test circuit.
TEST PROCEDURE :
- Adjust the current level at the I
H
value by short circuiting the D.U.T.
- Fire the D.U.T. with a surge current : I
PP
= 10A, 10/1000
µ
s.
- The D.U.T. will come back to the off-state within a duration of 50ms max.
ORDER CODE
Package Types Marking
PowerSO-10 TLP140M
TLP200M
TLP270M
TLP140M
TLP200M
TLP270M
D
2
PAK TLP140G
TLP200G
TLP270G
TLP140G
TLP200G
TLP270G
I
2
PAK TLP140G-1
TLP200G-1
TLP270G-1
TLP140G
TLP200G
TLP270G
MARKING
TPL
270
M
-
TR
Breakdown Voltage
Packaging:
-TR = tape and reel only for "M" version (600 pcs)
= tube (50 pcs)
Tripolar Line Protection
Package:
M : Power SO10
G : D
2
PAK
G-1 : I
2
PAK
TLPxxM/G/G-1
5/14
0.01 0.1 1 10 100 1000
0
10
20
30
40
50
60
70
80
90
100
t(s)
ITSM(A)
F=50Hz
Tj initial=25°C
TIP or RING
vs GND
Fig. 1:
Maximum peak on-state current versus
pulse duration.
-40-200 20406080
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Tamb (°C)
IH (Tamb) / IH (25°C)
Fig. 2:
Relative variation of I
H
versus T
amb
.
TIP
GND
RING
10 / 1000 µs
100 A
surge generator
V
BO
TIP RING
V
BO
TIP - GND
Fig. 4:
Test diagram for breakover voltage
measurement.
1 10 100 200
10
20
50
100
200
C(pF)
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE- / GND+
LINE / LINE
LINE+ / GND-
VR(V)
Fig. 3-1 :
junction capacitance versus applied re-
verse voltage (typical values) (TLP140M/G/G-1).
1 10 100 200
10
20
50
100
200
C(pF)
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE- / GND+
LINE / LINE
LINE+ / GND-
VR(V)
Fig. 3-2 :
junction capacitance versus applied re-
verse voltage (typical values) (TLP200M/G/G-1).
1 10 100 300
10
20
50
100
200
C(pF)
F=1MHz
Vosc=1VRMS
Tj=25°C
LINE- / GND+
LINE / LINE
LINE+ / GND-
VR(V)
Fig. 3-3 :
junction capacitance versus applied re-
verse voltage (typical values) (TLP270M/G/G-1).
TLPxxM/G/G-1
6/14

TLP140G

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
THYRISTOR 100A TO263-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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