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MC3488ADG

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 5
1 Publication Order Number:
MC3488A/D
MC3488A
Dual EIA−423/EIA−232D
Line Driver
The MC3488A dual is single−ended line driver has been designed to
satisfy the requirements of EIA standards EIA−423 and EIA−232D, as
well as CCITT X.26, X.28 and Federal Standard FIDS1030. It is
suitable for use where signal wave shaping is desired and the output
load resistance is greater than 450 W. Output slew rates are adjustable
from 1.0 ms to 100 ms by a single external resistor. Output level and
slew rate are insensitive to power supply variations. Input undershoot
diodes limit transients below ground and output current limiting is
provided in both output states.
The MC3488A has a standard 1.5 V input logic threshold for TTL or
NMOS compatibility.
Features
• PNP Buffered Inputs to Minimize Input Loading
• Short Circuit Protection
• Adjustable Slew Rate Limiting
• MC3488A Equivalent to 9636A
• Output Levels and Slew Rates are Insensitive to Power
Supply Voltages
• No External Blocking Diode Required for V
EE
Supply
• Second Source mA9636A
• Pb−Free Packages are Available
Figure 1. Simplified Application
Wave Shape Control
TTL Logic
RS−423 Interface
MC3488A Driver
MC3486
Three−State Receiver
PDIP−8
P1 SUFFIX
CASE 626
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAMS
http://onsemi.com
SOIC−8
D SUFFIX
CASE 751
PIN CONNECTIONS
5
6
8
7
4
3
1
2
Input B
Input A
GND
Wave
Shape
Output A
V
CC
Output B
V
EE
MC3488AP1
YYWWG
1
1
8
AWL
3488A
ALYW
G
1
8
1
A = Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G or G = Pb−Free Package
(Note: Microdot may be in either location)
MC3488A
http://onsemi.com
2
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Power Supply Voltages V
CC
V
EE
+ 15
− 15
V
Output Current Source
Sink
I
O+
I
O−
+ 150
− 150
mA
Operating Ambient Temperature T
A
0 to + 70 °C
Junction Temperature Range T
J
150 °C
Storage Temperature Range T
stg
− 65 to + 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Devices should not be operated at these values. The IElectrical CharacteristicsI provide conditions for actual device operation.
RECOMMENDED OPERATING CONDITIONS
Characteristic Symbol Min Typ Max Unit
Power Supply Voltages V
CC
V
EE
10.8
− 13.2
12
−12
13.2
− 10.8
V
Operating Temperature Range T
A
0 25 70 °C
Wave Shaping Resistor R
WS
10 − 1000
kW
TARGET ELECTRICAL CHARACTERISTICS (Unless otherwise noted, specifications apply over recommended operating conditions)
Characteristic Symbol Min Typ Max Unit
Input Voltage − Low Logic State V
IL
− − 0.8 V
Input Voltage − High Logic State V
IH
2.0 − − V
Input Current − Low Logic State (V
IL
= 0.4 V) I
IL
− 80 − −
mA
Input Current − High Logic State
(V
IH
= 2.4 V)
(V
IH
= 5.5 V)
I
IH1
I
IH2
−
−
−
−
10
100
mA
Input Clamp Diode Voltage (I
IK
= − 15 mA) V
IK
− 1.5 − − V
Output Voltage − Low Logic State
(R
L
= ∞), EIA−423
(R
L
= 3.0 kW), EIA−232D
(R
L
= 450 W), EIA−423
V
OL
− 6.0
− 6.0
− 6.0
−
−
−
− 5.0
− 5.0
− 4.0
V
Output Voltage − High Logic State
(R
L
= ∞), EIA−423
(R
L.
= 3.0 kW), EIA−232D
(R
L
= 450 W), EIA−423
V
OH
5.0
5.0
4.0
−
−
−
6.0
6.0
6.0
V
Output Resistance (R
L
q 450 W)
R
O
− 25 50
W
Output Short−Circuit Current (Note 2)
(V
in
= V
out
= 0 V)
(V
in
= V
IH(Min)
, V
out
= 0 V)
I
OSH
I
OSL
− 150
+15
−
−
− 15
+ 150
mA
Output Leakage Current (Note 3) (V
CC
= V
EE
= 0 V, − 6.0 V p V
o
p 6.0 V) I
ox
− 100 − 100
mA
Power Supply Currents (R
W
= 100 kW, R
L
= ∞, V
IL
p V
in
p V
IH
)
I
CC
I
EE
−
− 18
−
−
+ 18
−
mA
2. One output shorted at a time.
3. No V
EE
diode required.
MC3488A
http://onsemi.com
3
TRANSITION TIMES (Unless otherwise noted, C
L
= 30 pF, f = 1.0 kHz, V
CC
= − V
EE
= 12.0 V ± 10%, T
A
= 25°C, R
L
= 450 W.
Transition times measured 10% to 90% and 90% to 10%)
Characteristic Symbol Min Typ Max Unit
Transition Time, Low−to−High State Output
(R
W
= 10 kW)
(R
W
= 100 kW)
(R
W
= 500 kW)
(R
W
= 1000 kW)
t
TLH
0.8
8.0
40
80
1.4
14
70
140
ms
Transition Time, High−to−Low State Output
(R
W
= 10 kW)
(R
W
= 100 kW)
(R
W
= 500 kW)
(R
W
= 1000 kW)
t
THL
0.8
8.0
40
80
1.4
14
70
140
ms
ORDERING INFORMATION
Device Operating Temperature Range Package Shipping
†
MC3488AD
T
A
= 0 to +70°C
SOIC−8 98 Units / Rail
MC3488ADG SOIC−8
(Pb−Free)
98 Units / Rail
MC3488ADR2 SOIC−8 1000 / Tape & Reel
MC3488ADR2G SOIC−8
(Pb−Free)
1000 / Tape & Reel
MC3488AP1 PDIP−8 50 Units / Rail
MC3488AP1G PDIP−8
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3.0 V
90%
10%10%
90%
t
THL
Note: Input Rise
and Fall Times
(10% to 90%) p 10 ns
f = 1.0 kHz
P
W
= 500 ms
Pulse
Generator
R
L
To
Scope
(Output)
C
L
(Includes
Probe and Jig
Capacitance)
V
EE
MC3488A
V
CC
To
Scope
(Input)
R
WS
50
0 V
V
OH
Input
V
OL
0 V
Output
t
TLH
Figure 2. Test Circuit and Waveforms for Transition Times
P1-P3P4-P6

MC3488ADG

Mfr. #:
Buy MC3488ADG
Manufacturer:
ON Semiconductor
Description:
RS-232 Interface IC ANA INTRFCE DUAL DRVR
Lifecycle:
New from this manufacturer.
Delivery:
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