NXP Semiconductors
MC33664
Isolated network high-speed transceiver
MC33664_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 1.0 — 23 May 2018
4 / 15
6 Ratings and operating requirements relationship
The operating voltage range pertains to the VCC5 and VIO pins referenced to the AGND
and DGND pins.
Table 3. Ratings versus operating requirements
Fatal range Lower limited
operating range
Normal operating
range
Upper limited
operating range
Fatal range
4.5 V ≤ V
CC5
≤ 4.75 V
no permanent failure,
but IC functionality is
not guaranteed
0 V ≤ V
CC5
≤ 4.5 V
0 V ≤ V
IO
≤ 3.1 V
reset
4.75 V ≤ V
CC5
≤ 5.5 V
3.1 V ≤ V
IO
≤ 5.5 V
100 % functional
5.5 V ≤ V
CC5
≤ 7.0 V
5.5 V ≤ V
IO
≤ 7.0 V
V
PWR
< −0.3 V
Permanent failure
may occur
handling range; no permanent failure
7.0 V ≤ V
CC5
7.0 V ≤ V
IO
permanent failure
may occur
7 Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
All voltages are respect to reference ground (AGND and DGND) unless otherwise noted. Exceeding these ratings may
cause malfunction or permanent damage to the device.
Symbol Parameter Conditions Min Max Unit
V
IO
supply input voltage −0.3 +7.0 V
V
CC5
supply input voltage −0.3 +7.0 V
EN digital enable pin for Sleep or
Normal mode
−0.3 V
IO
+ 0.3 V
RDTX+,
RDTX−
communication bus −10 +10 V
INTB interrupt pin −0.3 V
IO
+ 0.3 V
SCLK_TX,
SCLK_RX,
CSB_TX,
CSB_RX,
DATA_TX,
DATA_RX
serial peripheral interface
communication ports
−0.3 V
IO
+ 0.3 V
human body model (HBM) ±2000 - V
charge device model (CDM) ±500 - V
CDM corner pins ±750 - V
machine model (MM) ±200 - V
RDTX+, RDTX−; HBM ±4000 - V
V
ESD
electrostatic discharge
voltage
RDTX+, RDTX−; MM
[1]
±200 - V
[1] Electrostatic discharge (ESD) testing is performed in accordance with the HBM (C
ZAP
= 100 pF, R
ZAP
= 1500 Ω).
NXP Semiconductors
MC33664
Isolated network high-speed transceiver
MC33664_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 1.0 — 23 May 2018
5 / 15
8 Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Max Unit
T
amb
ambient temperature −40 +125 °C
T
j
junction temperature
[1]
−40 +150 °C
T
stg
storage temperature −55 +150 °C
T
reflow(peak)
peak reflow temperature
[2]
[3]
- 260 °C
R
th(j-a)
thermal resistance from junction to ambient single layer (1s)
[4]
- 125 °C/W
R
th(j-pcb)
thermal resistance from junction to printed-circuit board multi layer (2s2p)
[5]
- 62 °C/W
[1] Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air
flow, power dissipation of other components on the board, and board thermal resistance.
[2] Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction
or permanent damage to the device.
[3] Package reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For peak package reflow temperature and moisture sensitivity
levels (MSL), go to http://www.nxp.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts
(i.e. MC33xxxD enter 33xxx)], and review parametric.
[4] Per SEMI G38-87 and JEDEC standard JESD51-2 with the single-layer board horizontal.
[5] Indicates the maximum thermal resistance between the die and the exposed pad surface as measured by the cold plate method (MIL SPEC-883
Method 1012.1) with the cold plate temperature used for the case temperature.
9 Characteristics
Table 6. Characteristics
Characteristic noted under conditions 4.75 V ≤ V
CC5
≤ 5.5 V, 3.1 V ≤ V
IO
≤ 5.5 V, −40 °C ≤ T
amb
≤ 125 °C, unless otherwise
noted. Typical values noted reflect the approximate parameter mean at V
CC5
= 5.0 V, V
IO
= 3.3 V/5.0 V, T
amb
= 25 °C and
device operating under nominal conditions unless otherwise noted.
Symbol Parameter Conditions Min Typ Max Unit
Power supply VCC5
fully operational 4.75 5.5 VV
CC5
supply voltage
limited operation 4.5 4.75 V
Normal mode; EN = 1;
continuous transmit;
50 Ω load
40 mAI
VCC5(NORMAL)
supply current
Normal mode; EN = 1;
continuous receive
3.0 mA
I
VCC5(SLEEP)
supply current Sleep mode; EN = 0;
INTB = 5.0 V
30 μA
VCC5
UV
VCC5 undervoltage POR
threshold
4.0 4.5 V
VCC5
UV_FLT
VCC5 undervoltage POR filter 2.5 μs
VCC5
UVHYS
VCC5 undervoltage POR
hysteresis
100 mV
Power supply VIO
V
IO
supply voltage 3.1 5.5 V
VIO
UV
VIO undervoltage POR
threshold
2.2 3.1 V
NXP Semiconductors
MC33664
Isolated network high-speed transceiver
MC33664_SDS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2018. All rights reserved.
Short data sheet: technical data Rev. 1.0 — 23 May 2018
6 / 15
Symbol Parameter Conditions Min Typ Max Unit
VIO
UV_FLT
VIO undervoltage POR filter 2.5 μs
VIO
UVHYS
VIO undervoltage POR
hysteresis
100 mV
I
VIO(SLEEP)
VIO sleep current EN = 0; INTB = 1 0.1 4.5 μA
I
VIO(NORMAL)
VIO Normal mode current EN = 1;
continuous communication;
SPI_1 open
1.0 mA
Logic transmit EN, CSB_TX, SCLK_TX, DATA_TX
V
IH
HIGH-level input voltage 1.7 V
IO
+ 0.3 V
V
IL
LOW-level input voltage 0.95 V
V
hys
hysteresis voltage 150 mV
R
pd
pull-down resistance EN, SCLK_TX,
DATA_TX
100
R
pu
pull-up resistance CSB_TX 100
t
READY
Sleep mode to Normal mode EN LOW to HIGH
transition to device
ready to transmit
100 μs
t
INTB_PULSE_DELAY
EN LOW to HIGH transition to
INTB verification pulse
INTB
EN
100 μs
t
INTB_PULSE
INTB verification pulse
duration
INTB
EN
100 μs
f
SCLK_TX
SPI_0 frequency SCLK_TX 2.0 MHz
a SCLK_TX HIGH see Figure 3 250 ns
b SCLK_TX LOW see Figure 3 250 ns
e SCLK_TX to CSB_TX see Figure 3 250 ns
L CSB_TX to start of message
CSB_TX
RDTX+
RDTX–
1.1 μs

MC33664ATL1EG

Mfr. #:
Manufacturer:
NXP / Freescale
Description:
Interface - Specialized Isolated network high speed transceiver
Lifecycle:
New from this manufacturer.
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