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LX5510LQ

P1-P3P4-P6P7-P9
LX5510
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright © 2000
Rev. 1.0d 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
DESCRIPTION
The LX5510 is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a two-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching.
The device is manufactured with an
InGaP/GaAs Heterojunction Bipolar
Transistor (HBT) IC process
(MOCVD). With single low voltage
supply of 3.3V 20 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 65mA.
For +19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3.0%, and consumes 125 mA total DC
current with the nominal 3.3V bias.
With increased bias of 5 V EVM is ~
4% at 23 dBm.
The LX5510 is available in a 16-pin
3mmx3mm micro-lead quad package
(MLPQ). The compact footprint, low
profile, and excellent thermal capability
of the MLPQ package makes the
LX5510 an ideal solution for medium-
gain power amplifier requirements for
IEEE 802.11b/g applications
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~65mA
Power Gain ~20dB @ 2.45GHz
and Pout = 19dBm
Total Current 125mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm
2
)
Low Profile (0.9mm)
APPLICATIONS
IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
LQ
Plastic MLPQ
16 pin
RoHS Compliant / Pb-free Transition DC: 0418
LX5510LQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5510LQ-TR)
This device is classified as ESD Level 0 in accordance
with JESD22-A114-B, (HBM) testing. Appropriate
ESD procedures should be observed when handling
this device.
L
L
X
X
5
5
5
5
1
1
0
0
LX5510
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright © 2000
Rev. 1.0d 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power...........................................................................................15dBm
Operation Ambient Temperature...................................................-40°C to +85°C
Storage Temperature....................................................................-65°C to +150°C
Peak Package Solder Reflow Temp. (40 seconds maximum exposure)........260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
x denotes respective pin designator 1, 2, or 3
THERMAL DATA
LQ
Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θ
JC
10°C/W
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θ
JA
50°C/W
PACKAGE PIN OUT
RF IN
RF IN
VB1
VB2
VCC
RF OUT
RF OUT
VC1
VC2
*
1
2
3
4
5678
9
1
0
11
12
13 14 15 16
* Pad is Ground
N/C
N/C
N/C
N/C
N/C
N/C
N/C
LQ PACKAGE
(Bottom View)
N/C = No connect
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name Description
RF IN RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage.
VB1 Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
VCC
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins,
resulting in a single supply voltage (referred to as Vc).
RF OUT RF output.
VC1
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor,
followed by a 8.2 nH blocking inductor at the supply side.
VC2
Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor
and 1 uF bypass capacitor.
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
LX5510
PRODUCTION DATA SHEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
Copyright © 2000
Rev. 1.0d 2005-08-18
WWW.Microsemi .COM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
TM
®
ELECTRICAL CHARACTERISTICS
Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, T
A
= 25°C, unless otherwise specified
LX5510
Parameter Symbol Test Conditions
Min Typ Max
Units
`
SECTION HEADER
Frequency Range f 2.4 2.5 GHz
Power Gain at Pout = 19dBm Gp 20 dB
EVM at Pout = 19dBm 64GQAM / 54Mbps 3.0 %
Total Current at Pout = 19dBm Ic_total 125 mA
Quiescent Current Icq 65 mA
Bias Control Reference Current Iref For Icq = 65mA 1.2 mA
Small-Signal Gain S21 20 dB
Gain Flatness ΔS21 Over 100MHz 1 dB
Gain Variation Over Temperature ΔS21 0°C to +70°C 1 dB
Input Return Loss S11 10 dB
Output Return Loss S22 10 dB
Reverse Isolation S12 -40 dB
Second Harmonic Pout = 19dBm -55 dBc
Third Harmonic Pout = 19dbm -55 dBc
Total Current at Pout=23dBm 11 Mbps CCK 180 mA
2
nd
side lobe at 23 dBm 11 Mbps CCK -52 dBc
Ramp-On Time t
ON
10 ~ 90% 100 ns
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
E
E
L
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E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
P1-P3P4-P6P7-P9

LX5510LQ

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Buy LX5510LQ
Manufacturer:
Microchip / Microsemi
Description:
RF Amplifier Wireless LAN Power Amplifie
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