KSD362RTU

©2000 Fairchild Semiconductor International Rev. A, February 2000

KSD362

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage 150 V

V

CEO

Collector-Emitter Voltage 70 V

V

EBO

Emitter-Base Voltage 8 V

I

C

Collector Current 5 A

P

C

Collector Dissipation (T

C

=25°C) 40 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 1mA, I

E

= 0 150 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 2mA, R

BE

= ∞ 70 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 1mA, I

C

= 0 8 V

I

CBO

Collector Cut-off Current V

CB

= 100V, I

E

= 0 20 µA

h

FE

DC Current Gain V

CE

= 5V, I

C

= 5A 20 140

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 5A, I

B

= 0.5A 1 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 5A, I

B

= 0.5A 1.5 V

f

T

Current Gain Bandwidth Product V

CE

= 5V, I

C

= 0.5A 10 MHz

Classification N R O

h

FE

20 ~ 50 40 ~ 80 70 ~ 140

KSD362

B/W TV Horizontal Deflection Output

• Collector-Base Voltage : V

CBO

=150V

• Collector Current : I

C

=5A

• Collector Dissipation : P

C

=40W(T

C

=25°C)

1.Base 2.Collector 3.Emitter

1

TO-220

©2000 Fairchild Semiconductor International

KSD362

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

0 4 8 12 16 20

0

1

2

3

4

5

I

B

= 5mA

I

B

= 10mA

I

B

= 15mA

I

B

= 20mA

I

B

= 25mA

I

B

= 30mA

I

B

= 45mA

I

B

= 40mA

I

B

= 50mA

I

B

= 35mA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

10

100

1000

10000

V

CE

= 5V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

110100

10

100

1000

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

10 100

0.1

1

10

1. Tc=25

℃

2. *single pulse

*10ms

S/B limitation

S/B limitation

Thermal

limitation

*200ms

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

10

20

30

40

50

60

70

80

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

4.50

±0.20

9.90

±0.20

1.52

±0.10

0.80

±0.10

2.40

±0.20

10.00

±0.20

1.27

±0.10

ø3.60

±0.10

(8.70)

2.80

±0.10

15.90

±0.20

10.08

±0.30

18.95MAX.

(1.70)

(3.70)(3.00)

(1.46)

(1.00)

(45°)

9.20

±0.20

13.08

±0.20

1.30

±0.10

1.30

+0.10

–0.05

0.50

+0.10

–0.05

2.54TYP

[2.54

±0.20

]

2.54TYP

[2.54

±0.20

]

TO-220

Package Demensions

©2000 Fairchild Semiconductor International

Rev. A, February 2000

KSD362

Dimensions in Millimeters

KSD362RTU

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

TRANS NPN 70V 5A TO-220

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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