ESH1B - ESH1D
CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Ultra fast recovery time for high efficiency
- Halogen-free according to IEC 61249-2-21
Molding compound, UL flammability classification rating 94V-0
Part No. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
V
RRM
V
V
RMS
V
V
DC
V
I
F(AV)
A
t
rr
ns
C
J
pF
T
J
°C
T
STG
°C
Document Number: DS_D1309019 Version: E15
Note 1: Pulse test with PW=300μs, 1% duty cycle
Taiwan Semiconductor
ESH1B ESH1C
100 150 200
70
°C/W
Operating junction temperature range
Storage temperature range - 55 to +175
- 55 to +175
Maximum reverse recovery time (Note 2) 15
Typical thermal resistance
R
θJL
R
θJA
35
85
100 150 200
0.90
1
I
R
16
μA
25
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
V
F
V
T
J
=25°C
T
J
=125°C
1A, 100V - 200V Surface Mount Ultra Fast Rectifiers
FEATURES
Moisture sensitivity level: level 1, per J-STD-020
Maximum DC blocking voltage
Maximum average forward rectified current 1
105 140
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
ESH1D
Typical junction capacitance (Note 3)
Maximum reverse current @ rated V
R
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA)
DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25°C unless otherwise noted)
PARAMETER SYMBOL
