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M74HC393RM13TR
P1-P3
P4-P6
P7-P9
P10-P11
M74HC393
4/11
ABSOL
UTE
MAXIMU
M RA
TINGS
Ab
solut
e Maximu
m
R
ating
s are th
ose values
beyon
d which
da
mag
e t
o
t
he dev
ice may oc
cur. Func
tiona
l oper
ation un
der these
c
ondit
ions is
not imp
lie
d
(*
) 500mW
a
t 65
°
C; de
rate
to 30
0mW
b
y 10mW/
°
C
from 65
°
C to
85
°
C
RECOMMENDE
D
OPERATING CONDITIONS
Symbol
Parame
ter
V
alue
Unit
V
CC
Supply V
ol
tage
-0.5 to +
7
V
V
I
DC Input Voltage
-0.5 to V
CC
+ 0.5
V
V
O
DC Output V
oltage
-0.5 to V
CC
+ 0.5
V
I
IK
DC Input D
iode Curren
t
±
2
0
mA
I
OK
DC Output
Diode Curr
ent
±
2
0
mA
I
O
DC Output
Current
±
2
5
mA
I
CC
or I
GND
DC V
CC
or Ground Current
±
5
0
mA
P
D
Power Diss
ipation
500(*)
mW
T
stg
Storage T
e
mperature
-65 to +1
50
°C
T
L
Lead T
emp
erature (10
sec)
300
°C
Symbol
Parame
ter
V
alue
Unit
V
CC
Supply V
ol
tage
2 to 6
V
V
I
Input Voltage
0 to V
CC
V
V
O
Output V
ol
tage
0 to V
CC
V
T
op
Operating T
emperatur
e
-55 to 125
°C
t
r
, t
f
Input Rise and Fall T
ime
V
CC
= 2.0V
0 to 1000
ns
V
CC
= 4.5V
0 to 500
ns
V
CC
= 6.0V
0 to 400
ns
M74HC393
5/11
DC S
PE
C
I
F
I
CATIONS
Symbo
l
Param
eter
T
est Conditi
on
V
alue
Unit
V
CC
(V)
T
A
= 25°
C
-40 to 8
5°C
-55 to 1
25°C
Min.
T
yp.
Max.
Min.
Max.
Mi
n.
M
ax.
V
IH
High Lev
el Input
V
oltage
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
V
IL
Low Lev
el Input
V
oltage
2.0
0.5
0.5
0.5
V
4.5
1.35
1.3
5
1.35
6.0
1.8
1.8
1.8
V
OH
High Lev
el Output
V
oltage
2.0
I
O
=-20
µ
A
1.9
2.0
1.9
1.
9
V
4.5
I
O
=-20
µ
A
4.4
4.5
4.4
4.
4
6.0
I
O
=-20
µ
A
5.9
6.0
5.9
5.
9
4.5
I
O
=-4.0 m
A
4.18
4.31
4.13
4.10
6.0
I
O
=-5.2 m
A
5.68
5.8
5.63
5.60
V
OL
Low Lev
el Output
V
oltage
2.0
I
O
=20
µ
A
0.0
0.1
0.1
0
.1
V
4.5
I
O
=20
µ
A
0.0
0.1
0.1
0
.1
6.0
I
O
=20
µ
A
0.0
0.1
0.1
0
.1
4.5
I
O
=4.0 mA
0.17
0.26
0.33
0.40
6.0
I
O
=5.2 mA
0.18
0.26
0.33
0.40
I
I
Input Le
akage
Current
6.0
V
I
= V
CC
or GN
D
±
0.1
±
1
±
1
µ
A
I
CC
Quiesce
nt Supply
Current
6.0
V
I
= V
CC
or GN
D
44
0
8
0
µ
A
M74HC393
6/11
AC E
L
ECT
RI
CAL C
HARACTERISTICS
(C
L
= 50 pF, Input t
r
= t
f
= 6ns
)
CAPACITIVE CHARA
CT
ERISTICS
1)
C
PD
is
d
efined
as
t
he valu
e of the I
C’s int
ernal eq
uiva
lent capa
citan
ce whic
h is calc
ulate
d from t
he oper
ating cur
rent c
onsu
mption
w
ith
ou
t
lo
ad. (Refe
r to Test Circu
it).
Ave
rage ope
rating
c
urren
t c
a
n
b
e
o
btaine
d
b
y the follo
wing equa
tion.
I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/4 (
per FL
IP
FLOP)
Symbo
l
Param
eter
T
est Conditi
on
V
alue
Unit
V
CC
(V)
T
A
= 25°
C
-40 to 8
5°C
-55 to 1
25°C
Min.
T
yp.
Max.
Min.
Max.
Mi
n.
M
ax.
t
TLH
t
THL
Output Transitio
n
Time
2.0
30
75
95
1
10
ns
4
.
5
8
1
51
92
2
6
.
0
7
1
31
61
9
t
PLH
t
PHL
Propaga
tion Delay
Time
(CLOCK
- QA)
2.0
50
120
150
180
ns
4.5
15
24
30
36
6.0
13
20
26
31
t
PLH
t
PHL
Propaga
tion Delay
Time
(CLOCK
- QB)
2.0
70
160
200
240
ns
4.5
20
32
40
48
6.0
17
27
34
41
t
PLH
t
PHL
Propaga
tion Delay
Time
(CLOCK
- QC)
2.0
90
195
245
295
ns
4.5
25
39
49
59
6.0
21
33
42
50
t
PLH
t
PHL
Propaga
tion Delay
Time
(CLOCK
- QD)
2.0
120
230
290
345
ns
4.5
30
46
58
69
6.0
26
39
49
59
t
PHL
Propaga
tion Delay
Time
(CLEAR - Qn)
2.0
55
150
190
225
ns
4.5
18
30
38
45
6.0
15
26
32
38
f
MAX
Maximum
Clock
Frequen
cy
2.0
8.4
17
6.8
5.6
MHz
4.5
42
67
34
28
6.0
50
79
40
33
t
W(
H)
t
W(L)
Minimum
Pulse
Width (C
LOCK
)
2.0
28
75
95
1
10
ns
4
.
5
7
1
51
92
2
6
.
0
6
1
31
61
9
t
W(
H)
Minimum
Pulse
Width (C
LEAR)
2.0
28
75
95
1
10
ns
4
.
5
7
1
51
92
2
6
.
0
6
1
31
61
9
t
REM
Minimum
Removal
Time
2.0
25
30
35
ns
4.5
5
6
7
6.0
5
5
6
Symbo
l
Param
eter
T
est Conditi
on
V
alue
Unit
V
CC
(V)
T
A
= 25°
C
-40 to 8
5°C
-55 to 1
25°C
Min.
T
yp.
Max.
Min.
Max.
Mi
n.
M
ax.
C
IN
Input Ca
pacitance
5
1
01
01
0
p
F
C
PD
Power D
issipation
Capacita
nce (note
1)
35
pF
P1-P3
P4-P6
P7-P9
P10-P11
M74HC393RM13TR
Mfr. #:
Buy M74HC393RM13TR
Manufacturer:
STMicroelectronics
Description:
Counter ICs Dual Binary Counter
Lifecycle:
New from this manufacturer.
Delivery:
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Ups
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EMS
Payment:
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