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MRF5S21150HSR5

P1-P3P4-P6P7-P9P10-P12
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MRF5S21150HR3 MRF5S21150HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for P C N - P CS / ce l l ula r r a di o a n d WLL
applications.
• Typical 2-Carrier W- CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1300 mA,
P
out
= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
DD
Operation
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
µ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V
DSS
-0.5, +65 Vdc
Gate-Source Voltage V
GS
-0.5, +15 Vdc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
380
2.2
W
W/°C
Storage Temperature Range T
stg
- 65 to +150 °C
Case Operating Temperature T
C
150 °C
Operating Junction Temperature T
J
200 °C
CW Operation @ T
C
= 25°C
Derate above 25°C
CW 150
0.84
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
R
θ
JC
0.46
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes - AN1955.
MRF5S21150H
Rev. 1, 5/2006
Freescale Semiconductor
Technical Data
MRF5S21150HR3
MRF5S21150HSR3
2110-2170 MHz, 33 W AVG., 28 V
2 x W-CDMA
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465C- 02, STYLE 1
NI- 880S
MRF5S21150HSR3
CASE 465B- 03, STYLE 1
NI- 880
MRF5S21150HR3
Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
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2
RF Device Data
Freescale Semiconductor
MRF5S21150HR3 MRF5S21150HSR3
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 1 (Minimum)
Machine Model M3 (Minimum)
Charge Device Model C7 (Minimum)
Table 4. Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
— — 1 µAdc
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
— — 1 µAdc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 360 µAdc)
V
GS(th)
2.5 — 3.5 Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 1300 mAdc)
V
GS(Q)
— 3.7 — Vdc
Drain- Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 3.6 Adc)
V
DS(on)
— 0.26 0.3 Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 3.6 Adc)
g
fs
— 9 — S
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
— 3.2 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1300 mA, P
out
= 33 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2- carrier W -CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain
G
ps
11 12.5 — dB
Drain Efficiency η
D
23 25 — %
Intermodulation Distortion IM3 -37 -35 dBc
Adjacent Channel Power Ratio ACPR — -39 -37 dBc
Input Return Loss IRL — -12 -9 dB
1. Part internally matched both on input and output.
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MRF5S21150HR3 MRF5S21150HSR3
3
RF Device Data
Freescale Semiconductor
Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic
C5C1
R2
V
bias
V
supply
C20C12C11C10
C4
C3
C17
C9
C6
C8
C13
C2
RF
OUTPUT
RF
INPUT
R1
C7
C14 C15 C16
C18
C19
Z1 Z2 Z3 Z4 Z5 Z8
Z6
Z7
Z9
Z10
Z11
Z12 Z13 Z14 Z15 Z16 Z17
+
++ +
++
Z10, Z11 0.709″ x 0.083″ Microstrip
Z12 0.415″ x 1.100″ Microstrip
Z13 0.874″ x 0.083″ Microstrip
Z14 1.182″ x 0.083″ Microstrip
Z15, Z16 0.070″ x 0.220″ Microstrip
Z17 0.430″ x 0.083″ Microstrip
PCB Taconic TLX8, 0.030″, ε
r
= 2.55
Z1 0.500″ x 0.083″ Microstrip
Z2 0.505″ x 0.083″ Microstrip
Z3 0.536″ x 0.083″ Microstrip
Z4 0.776″ x 0.083″ Microstrip
Z5 0.119″ x 1.024″ Microstrip
Z6, Z7 0.749″ x 0.083″ Microstrip
Z8 0.117″ x 1.024″ Microstrip
Z9 0.117″ x 1.100″ Microstrip
DUT
Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1 22 µF, 35 V Tantalum Capacitor TAJE226M035R AVX
C2, C6, C8, C9, C13, C18,
C19
6.8 pF 100B Chip Capacitors 100B6R8CW ATC
C3,C4 1.8 pF 100B Chip Capacitors 100B1R8BW ATC
C5, C7, C10, C14 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay-Vitramon
C11, C12, C15, C16 10 µF, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague
C17 0.3 pF Chip Capacitor 100B0R3BW ATC
C20 470 µF, 63 V Electrolytic Capacitor, Radial 13661471 Philips
R1, R2
10 kW, 1/4 W Chip Resistors
P1-P3P4-P6P7-P9P10-P12

MRF5S21150HSR5

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NXP Semiconductors
Description:
FET RF 65V 2.17GHZ NI-880S
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