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SI1035X-T1-GE3

P1-P3P4-P6P7-P9P10-P10
www.vishay.com
4
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Vishay Siliconix
Si1035X
N-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage Variance vs. Temperature
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1000
1
V
SD
-)V( egatloV niarD-ot-ecruoS
-Source Current (mA)I
S
T
J
= 125 °C
T
J
= 25 °C
T
J
= 50 °C
10
100
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50 - 25 0 25 50 75 100 125
I
D
= 0.25 mA
Variance (V)
V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
I
GSS
vs. Temperature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125
T
J
- Temperature (°C)
I
GSS
- (µA)
V
GS
= 2.8 V
BV
GSS
vs. Temperature
0
1
2
3
4
5
6
7
- 50 - 25 0 25 50 75 100 125
T
J
-Temperature (°C)
BV
GSS
- Gate-to-Source Breakdown Voltage (V)
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
www.vishay.com
5
Vishay Siliconix
Si1035X
P-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.1
0.2
0.3
0.4
0.5
0123456
V
GS
= 5 V thru 2.5 V
2 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
1.8 V
- On-Resistance (Ω)
R
DS(on)
0
5
10
15
20
25
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 1.8 V
V
GS
= 4.5 V
V
GS
= 2.5 V
0
1
2
3
4
5
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
DS
= 10 V
I
D
= 150 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
100
200
300
400
500
0.0 0.5 1.0 1.5 2.0 2.5 3.0
T
J
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)
I
D
0
20
40
60
80
100
120
048 12 16 20
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
C
-
Capacitance (pF)
V
GS
= 0 V
f = 1 MHz
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125
V
GS
= 4.5 V
I
D
= 150 mA
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
V
GS
= 1.8 V
I
D
= 125 mA
www.vishay.com
6
Document Number: 71426
S10-2544-Rev. C, 08-Nov-10
Vishay Siliconix
Si1035X
P-CHANNEL TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage Variance vs. Temperature
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
1000
1
V
SD
-)V( egatloV niarD-ot-ecruoS
T
J
= 125 °C
T
J
= 25 °C
T
J
= - 55 °C
10
100
I
S
-Source Current (mA)
- 0.3
- 0.2
- 0.1
0.0
0.1
0.2
0.3
- 50 - 25 0 25 50 75 100 125
I
D
= 0.25 mA
Variance (V)
V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
I
GSS
vs. Temperature
0
10
20
30
40
50
0123456
I
D
= 150 mA
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
I
D
= 125 mA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
- 50 - 25 0 25 50 75 100 125
T
J
- Temperature (°C)
I - (µA)
GSS
V
GS
= 2.8 V
BV
GSS
vs. Temperature
-7
-6
-5
-4
-3
-2
-1
0
- 50 - 25 0 25 50 75 100 125
T
J
-Temperature (°C)
BV
GSS
-
Gate-to-Source Breakdown Voltage (V)
P1-P3P4-P6P7-P9P10-P10

SI1035X-T1-GE3

Mfr. #:
Buy SI1035X-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V
Lifecycle:
New from this manufacturer.
Delivery:
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