FMMT593
Document number: DS33106 Rev. 5 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FMMT593
Product Line o
Diodes Incorporated
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
-120 — — V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BV
CEO
-100 — — V
I
C
= -1mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 — — V
I
E
= -100µA
Collector Cutoff Current
I
CBO
— — -100 nA
V
CB
= -100V
Emitter Cutoff Current
I
EBO
— — -100 nA
V
EB
= -5.6V
Collector-Emitter Cut-Off Current
I
CES
— — -100 nA
V
CES
= -100V
Static Forward Current Transfer Ratio (Note 8)
h
FE
100
100
100
50
—
—
—
300
—
—
I
C
= -1mA, V
CE
= -5V
I
C
= -250mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 8)
V
CE(sat)
— —
-200
-300
mV
I
C
= - 250mA, I
B
= -25mA
I
C
= - 500mA, I
B
= -50mA
Base-Emitter Saturation Voltage (Note 8)
V
BE
sat
— — -1.1 V
I
C
= -500mA, I
B
= -50mA
Base-Emitter Turn-On Voltage (Note 8)
V
BE
on
— — -1.0 V
I
C
= -1mA, V
CE
= -5V
Transition Frequency
f
T
50 — — MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Output Capacitance
C
obo
— — 5 pF
V
CB
= -10V, f = 1MHz
Notes: 8.
Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.