SQ3987EV
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Vishay Siliconix
S17-0853-Rev. A, 05-Jun-17
2
Document Number: 75315
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Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Gate threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 - -2.5 V
Gate-body leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain
current
I
DSS
V
GS
= 0 V V
DS
= -30 V - - -1
μA
V
GS
= 0 V V
DS
= -30 V, T
J
= 175 °C - - -50
On-state drain current
a
I
D(on)
V
GS
= -10 V V
DS
≤ -5 V -4 - - A
Drain-source on-state
resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -1.5 A - 0.085 0.133
Ω
V
GS
= -4.5 V I
D
= -2 A - 0.135 0.185
Forward transconductance
a
g
fs
V
DS
= -5 V, I
D
= -1 A - 4.2 - S
Diode forward voltage
a
V
SD
I
S
= -0.5 A, V
GS
= 0 V - -0.83 -1.10 V
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= -15 V
- 456 570
pFOutput capacitance C
oss
- 85 106
Reverse capacitance C
rss
-5974
Total gate charge Q
g
V
GS
= -10 V V
DS
= -15 V, I
D
= -3 A
- 9.7 12.2
nCGate-source charge Q
gs
-1.3-
Gate-drain charge Q
gd
-2-
Gate resistance R
g
f = 1 MHz 9 - 24 Ω
Turn-on delay time t
d(on)
V
DD
= -10 V, R
L
= 10 Ω
I
D
≅ -1 A, V
GEN
= -10 V, R
g
= 1 kΩ
-6.68.3
ns
Rise time t
r
-2.43
Turn-off delay time t
d(off)
- 18.4 23
Fall time t
f
-2.22.8
Source-Drain Diode Ratings and Characteristic
b
Pulsed current I
SM
---11A
Forward voltage V
SD
I
F
= 0.5 A, V
GS
= 0 V - -0.83 -1.1 V
Reverse recovery fall time t
a
V
DD
= -24 V, I
FM
= -1.5 A, di/dt = 100 A/μs,
R = 160 Ω, L = 1 mH, pulse W = 2 μs
-9.1-ns
Reverse recovery rise time t
b
-4.8-ns
Body diode reverse recovery
time
t
rr
-1428ns
Body diode reverse recovery
charge
Q
rr
- 9 18 μC
Body diode peak reverse
recovery current
I
RM(REC)
--1.4-A
