Philips Semiconductors Product specification
74ALVCH16827
20-bit buffer/line driver, non-inverting (3-State)
1998 Jul 27
4
LOGIC DIAGRAM
nA0
nY0
nOE
1
nA1
nY1
nA2
nY2
nA3
nY3
nA4
nY4
nA5
nY5
nA6
nY6
nA7
nY7
nA8
nY8
nA9
nY9
nOE2
SH00013
RECOMMENDED OPERATING CONDITIONS
SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
DC supply voltage 2.5V range (for max. speed
performance @ 30 pF output load)
2.3 2.7
CC
DC supply voltage 3.3V range (for max. speed
performance @ 50 pF output load)
3.0 3.6
V
I
DC Input voltage range 0 V
CC
V
V
O
DC output voltage range 0 V
CC
V
T
amb
Operating free-air temperature range –40 +85 °C
t
r
, t
f
Input rise and fall times
V
CC
= 2.3 to 3.0V
V
CC
= 3.0 to 3.6V
0
0
20
10
ns/V
ABSOLUTE MAXIMUM RATINGS
1
In accordance with the Absolute Maximum Rating System (IEC 134)
Voltages are referenced to GND (ground = 0V)
SYMBOL
PARAMETER CONDITIONS RATING UNIT
V
CC
DC supply voltage –0.5 to +4.6 V
I
IK
DC input diode current V
I
0 –50 mA
p
For control pins
2
–0.5 to +4.6
I
For data inputs
2
–0.5 to V
CC
+0.5
I
OK
DC output diode current V
O
V
CC
or V
O
0 50 mA
V
O
DC output voltage Note 2 –0.5 to V
CC
+0.5 V
I
O
DC output source or sink current V
O
= 0 to V
CC
50 mA
I
GND
, I
CC
DC V
CC
or GND current 100 mA
T
stg
Storage temperature range –65 to +150 °C
P
TOT
Power dissipation per package
–plastic medium-shrink (SSOP)
–plastic thin-medium-shrink (TSSOP)
For temperature range: –40 to +125 °C
above +55°C derate linearly with 11.3 mW/K
above +55°C derate linearly with 8 mW/K
850
600
mW
NOTE:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
