+125
O
C
TSTG
Forward voltage
IF = 10mA
VF V
0.45
Reverse current
Capacitance between terminals
VR = 10V
f = 1 MHz, and 10 VDC reverse voltage
IR
CT
uA
pF
6
1
CDBQR0140R-HF
SMD Schottky Barrier Diode
QW-G1104
O
Maximum Rating (at TA=25 C unless otherwise noted)
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Page 1
Typ
IO
VR
VRRM
Average forward rectified current
Reverse voltage
Repetitive Peak reverse voltage
Forward current,surge peak
Symbol
Parameter
Conditions Min
Max
Unit
V
V
mA
100
40
45
Tj
Storage temperature range
Operating temperature range
O
C
+125
-40
IFSM
8.3 ms single half sine-wave superimposed
on rate load (JEDEC method)
1
A
REV:C
mW
125
PD
Power Dissipation
Io = 100 mA
VR = 40 Volts
RoHS Device
Halogen Free
0402/SOD-923F
Dimensions in inches and (millimeter)
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
0.020(0.50)
0.022(0.55)
0.018(0.45)
0.014(0.35)
0.010(0.25)
0.016(0.40)
Circuit diagram
Mechanical data
- Case: 0402 / SOD-923F standard package,
molded plastic.
- Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
- Marking Code: cathode band & B9
- Mounting position: Any.
- Weight: 0.001 grams(approx.).
Features
- Low reverse current.
- Extremely thin / leadless package.
- Majority carrier conduction.
- Designed for mounting on small surface.
Company reserves the right to improve product design , functions and reliability without notice.
Typ
Symbol
Parameter
Conditions Min
Max
Unit
-40
