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BGA5L1BN6E6327XTSA1

P1-P3P4-P6P7-P9P10-P12
Data Sheet 4 Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Features
Description
The BGA5L1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 600 MHz to
1000 MHz. The LNA provides 18.5 dB gain and 0.7 dB noise figure at a current consumption of 8.2 mA in the
application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 2.7 dB.
The BGA5L1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from
1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (Bypass- and High gain-Mode).
OFF-state can be enabled by powering down VCC.
Pin Definition and Function
Table 1 Pin Definition and Function
Pin No. Name Function
1GNDGround
2 VCC DC supply
3 AO LNA output
4GNDGround
5AI LNA input
6C Control
Data Sheet 5 Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Maximum Ratings
2 Maximum Ratings
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Table 2 Maximum Ratings
Parameter Symbol Values Unit Note or
Test Condition
Min. Typ. Max.
Voltage at pin VCC V
CC
-0.3 – 3.6 V
1)
1) All voltages refer to GND-Node unless otherwise noted
Voltage at pin AI V
AI
-0.3 – 0.9 V –
Voltage at pin AO V
AO
-0.3 – V
CC
+ 0.3 V –
Voltage at pin C V
C
-0.3 – V
CC
+ 0.3 V –
Voltage at pin GND V
GND
-0.3 – 0.3 V –
Current into pin VCC I
CC
––16mA–
RF input power P
IN
– – +25 dBm –
Total power dissipation,
T
S
< 148 °C
2)
2) T
S
is measured on the ground lead at the soldering point
P
tot
––60mW–
Junction temperature T
J
– – 150 °C –
Ambient temperature range T
A
-40 – 85 °C –
Storage temperature range T
STG
-55 – 150 °C –
Data Sheet 6 Revision 2.0
2018-03-15
BGA5L1BN6
18dB High Gain Low Noise Amplifier for LTE Lowband
Electrical Characteristics
3 Electrical Characteristics
Table 3 Electrical Characteristics V
CC
= 1.8V
1)
T
A
= 25 °C, V
CC
= 1.8 V, V
C,BP
= 1.8 V, V
C,OFF
= 0 V, f = 600 - 1000 MHz
1) Based on the application described in Chapter 4
Parameter Symbol Values Unit Note or Test Condition
Min. Typ. Max.
Supply voltage V
CC
1.5 1.8 3.6 V –
Control voltages V
C
1.0 – V
CC
V High gain mode
0–0.4VBypass mode
Supply current I
CC
– 8.2 9.7 mA High gain mode
– 85 120 µA Bypass mode
Insertion power gain
f = 840 MHz
|S
21
|
2
17.0 18.5 20.0 dB High gain mode
-3.9 -2.7 -1.5 dB Bypass mode
Noise figure
2)
f = 840 MHz, Z
S
=50Ω
2) PCB losses are subtracted
NF – 0.7 1.2 dB High gain mode
– 2.7 3.9 dB Bypass mode
Input return loss
3)
f = 840 MHz
3) Verification based on AQL; not 100% tested in production
RL
IN
7 10 – dB High gain mode
8 11 – dB Bypass mode
Output return loss
3)
f = 840 MHz
RL
OUT
10 19 – dB High gain mode
58–dBBypass mode
Reverse isolation
3)
f = 840 MHz
1/|S
12
|
2
22 29 – dB High gain mode
1.5 2.7 – dB Bypass mode
Power on time
4)6)
4) Gain changed to >90% of gain difference (in dB)
t
S
– 3 7 µs OFF to High gain mode
Inband input 1dB-compression
point, f = 840 MHz
3)
IP
1dB
-24 -20 – dBm High gain mode
-2 2 – dBm Bypass mode
Inband input 3
rd
-order
intercept point
3)5)
f
1
= 840 MHz, f
2
= f
1
+/- 1 MHz
5) Input power HG = -30 dBm for each tone; input power BP = -10 dBm for each tone
IIP
3
-12 -7 – dBm High gain mode
611–dBmBypass mode
Stability
6)
6) Guaranteed by device design; not tested in production
k > 1 – – f = 20 MHz ... 10 GHz
P1-P3P4-P6P7-P9P10-P12

BGA5L1BN6E6327XTSA1

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Manufacturer:
Infineon Technologies
Description:
RF Amplifier RF SILICON MMIC
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