Product Standards
MOS FET
MTM861280LBF
Electrical Characteristics Ta = 25 °C ± 3 °C
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Pulse test
*2 Measurement circuit for Turn-on Delay Time / Rise Time / Turn-off Delay Time / Fall Time
Page
80
VDS = -10 V, VGS = 0 V
f = 1 MHz
420
ID = -0.5 A, VGS = -4.0 V
2.0 ID = -0.5 A, VDS = -10 V
12
1.0
±10
RDS(on)1
S
2of6
ID = -1.0 mA, VDS = -10 V -0.45
300 420
Parameter Symbol Conditions Min Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = -1.0 mA, VGS = 0 V -20 V
Gate-source Leakage Current IGSS
VGS =
10 V, VDS = 0 V
Zero Gate Voltage Drain Current IDSS -1.0 VDS = -20 V, VGS = 0 V
Drain-source On-state Resistance
*1
-1.0
RDS(on)2
ID = -0.5 A, VGS = -2.5 V
Gate-source Threshold Voltage Vth -1.5
560
V
mΩ
pFOutput Capacitance Coss
Forward transfer admittance
*1
|Yfs|
Input Capacitance Ciss
12
Turn-on Delay Time
*2
td(on) 12
VDD = -15 V, VGS = 0 to -4 V
ID = -0.5 A
Reverse Transfer Capacitance Crss
Turn-off Delay Time
*2
td(off) 17
Rise Time
*2
tr 6
10
Fall Time
*2
tf
VDD = -15 V, VGS = -4 to 0 V
ID = -0.5 A
A
A
ns
ns
