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BPW76A

P1-P3P4-P5
Silicon NPN Phototransistor, RoHS Compliant
w
ww.vishay.com For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
398 Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Vishay Semiconductors
DESCRIPTION
BPW76 is a silicon NPN phototransistor with high radiant
sensitivity in hermetically sealed TO-18 package with base
terminal and flat glass window. It is sensitive to visible and
near infrared radiation.
FEATURES
• Package type: leaded
• Package form: TO-18
• Dimensions (in mm): Ø 4.7
• High photo sensitivity
• High radiant sensitivity
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 40°
• Base terminal connected
• Hermetically sealed package
• Flat glass window
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Detector in electronic control and drive circuits
Note
Test condition see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
T
amb
= 25 °C, unless otherwise specified
94 8401
PRODUCT SUMMARY
COMPONENT I
ca
(mA) ϕ (deg) λ
0.1
(nm)
BPW76A 0.4 to 0.8 ± 40 450 to 1080
BPW76B > 0.6 ± 40 450 to 1080
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
BPW76A Bulk MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
BPW76B Bulk MOQ: 1000 pcs, 1000 pcs/bulk
TO-18
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Collector base voltage V
CBO
80 V
Collector emitter voltage V
CEO
70 V
Emitter base voltage V
EBO
5V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Total power dissipation T
amb
≤ 25 °C P
V
250 mW
Junction temperature T
j
125 °C
Operating temperature range T
amb
- 40 to + 125 °C
Storage temperature range T
stg
- 40 to + 125 °C
Soldering temperature t ≤ 5 s T
sd
260 °C
Thermal resistance junction/ambient Connected with Cu wire,
0.14 mm
2
R
thJA
400 K/W
Thermal resistance junction/case
R
thJC
150 K/W
Document Number: 81526 For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
Rev. 1.4, 08-Sep-08 399
BPW76A, BPW76B
Silicon NPN Phototransistor, RoHS Compliant
Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Note
T
amb
= 25 °C, unless otherwise specified
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature
0 25 50 75 100
0
200
400
800
150
94 8342
600
125
R
thJC
R
thJA
T
amb
- Ambient Temperature (°C)
P - Total Power Dissipation (mW)
tot
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Collector emitter breakdown voltage I
C
= 1 mA V
(BR)CEO
70 V
Collector emitter dark current V
CE
= 20 V, E = 0 I
CEO
1 100 nA
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz, E = 0 C
CEO
6pF
Angle of half sensitivity ϕ ± 40 deg
Wavelength of peak sensitivity λ
p
850 nm
Range of spectral bandwidth λ
0.1
450 to
1080
nm
Collector emitter saturation voltage E
e
= 1 mW/cm
2
, λ = 950 nm, I
C
= 0.1 mA V
CEsat
0.15 0.3 V
Turn-on time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
on
6µs
Turn-off time V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω t
off
5µs
Cut-off frequency V
S
= 5 V, I
C
= 5 mA, R
L
= 100 Ω f
c
110 kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Collector light current
E
e
= 1 mW/cm
2
, λ = 950 nm,
V
CE
= 5 V
BPW76A I
ca
0.4 0.8 mA
BPW76B I
ca
0.6 mA
94 8343
20
10
0
10
1
10
2
10
3
10
4
10
6
10
5
150
50 100
V
CE
= 20 V
E=0
I - Collector Dark Current (nA)
CEO
T
amb
- Ambient Temperature (°C)
0
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
0 1020304050607080 90 100
94 8344
V = 5V
λ = 950 nm
CE
E
e
= 1 mW/cm
2
I - Relative Collector Current
ca rel
T
amb
- Ambient Temperature (°C)
www.vishay.com For technical questions, contact: detectortechsupport@vishay.com
Document Number: 81526
400 Rev. 1.4, 08-Sep-08
BPW76A, BPW76B
Vishay Semiconductors
Silicon NPN Phototransistor, RoHS Compliant
Fig. 4 - Collector Light Current vs. Irradiance
Fig. 5 - Collector Light Current vs. Collector Emitter Voltage
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 7 - Turn-on/Turn-off Time vs. Collector Current
Fig. 8 - Relative Spectral Sensitivity vs. Wavelength
Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement
0.01 0.1 1
0.001
0.01
0.1
1
10
10
94 8345
V
CE
= 5 V
λ = 950 nm
I - Collector Light Current (mA)
ca
E
e
- Irradiance (mW/cm
2
)
0.1 1 10
0.01
0.1
1
I - Collector Light Current (mA)
ca
V
CE
- Collector Emitter Voltage (V)
100
94 8346
E
e
= 1 mW/cm
2
0.5 mW/cm
2
0.2 mW/cm
2
0.1 mW/cm
2
0.05 mW/cm
2
BPW76A
λ = 950 nm
0.1 1 10
0
4
8
12
16
20
C
CEO
- Collector Ermitter Capacitance (pF)
V
CE
- Collector Ermitter Voltage (V)
100
94 8247
f = 1 MHz
1612
840
94 8253
0
2
4
6
8
12
t
on
/t
off
- Turn-on/Turn-off Time (µs)
I
C
- Collector Current (mA)
10
V
CE
= 5 V
R
L
= 100 Ω
λ = 950 nm
t
off
t
on
400 600 1000
0
0.2
0.4
0.6
0.8
1.0
S (λ)
rel
- Relative Spectral Sensitivity
λ - Wavelength (nm)
94 8348
800
0.4 0.2 0 0.2 0.4
S - Relative Sensitivity
rel
0.6
94 8347
0.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
P1-P3P4-P5

BPW76A

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Description:
Optical Sensors Phototransistors NPN Phototransistor 80V 250mW 850nm
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