MBR16100CTG
www.onsemi.com
2
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(T
C
= 166°C) Per Diode
Per Device
I
F(AV)
8.0
16
A
Peak Repetitive Forward Current
(Square Wave, 20 kHz)
T
C
= 165°C
I
FRM
16 A
Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half-wave, single phase, 60 Hz)
I
FSM
150 A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
I
RRM
0.5 A
Operating Junction Temperature (Note 1) T
J
*65 to +175 °C
Storage Temperature T
stg
*65 to +175 °C
Voltage Rate of Change (Rated V
R
) dv/dt 10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
q
JA
.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Junction−to−Ambient (Min. Pad)
R
q
JC
R
q
JA
2.0
60
°C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol Min Typical Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(i
F
= 8.0 A, T
J
= 125°C)
(i
F
= 8.0 A, T
J
= 25°C)
(i
F
= 16 A, T
J
= 125°C)
(i
F
= 16 A, T
J
= 25°C)
v
F
−
−
−
−
0.56
0.68
0.67
0.79
0.60
0.74
0.69
0.84
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
i
R
−
−
0.95
0.0013
5.0
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%.
