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Caution Although this device is designed to be as robust as possible, ESD (Electrostatic
Discharge) can damage this device. This device must be protected at all times from ESD. Static
charges may easily produce potentials of several kilovolts on the human body or equipment, which
can discharge without detection. Industry-standard ESD precautions must be employed at all times.
GaAs INTEGRATED CIRCUIT
PG2405T6Q
Document No. PG10753EJ02V0DS (2nd edition)
Date Published September 2009 NS
DESCRIPTION
The
PG2405T6Q is an SP3T GaAs FET switch which was developed for Bluetooth
TM
, wireless LAN and NFC.
This device can operate frequency from 10 MHz to 2.5 GHz, having the low insertion loss and high linearity.
This device is housed in a 10-pin plastic TSSON (Thin Shrink Small Out-line Non-leaded) package. And this
package is able to high-density surface mounting.
FEATURES
• Low insertion loss : Lins = 0.45 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
: Lins = 0.55 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
: Lins = 0.60 dB TYP. @ f = 2.5 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
• High isolation : ISL = 28 dB TYP. @ f = 1.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
: ISL = 22 dB TYP. @ f = 2.0 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
: ISL = 20 dB TYP. @ f = 2.5 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
• Handling power : Pin (0.1 dB) = +31.0 dBm TYP. @ f = 2.5 GHz, Vcont (H) = 2.8 V, Vcont (L) = 0 V
• High-density surface mounting : 10-pin plastic TSSON package (2.0 1.35 0.37 mm)
APPLICATIONS
• Bluetooth and IEEE802.11b/g etc.
• NFC (FeliCa
TM
etc.)
ORDERING INFORMATION
10-pin plastic TSSON
(Pb-Free)
Embossed tape 8 mm wide
Pin 5, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order:
PG2405T6Q-A
