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DSS4160DS-7

P1-P3P4-P6P7-P7
DSS4160DS
Document number DS36556 Rev. 1 – 2
4 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Electrical Characteristics - Q1 & Q2 common (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage
BV
CBO
80
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 13)
BV
CEO
60
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
5
V
I
E
= 100µA
Collector-Base Cutoff Current
I
CBO
100 nA
V
CB
= 60V, I
E
= 0A
50 µA
V
CB
= 60V, I
E
= 0A, T
J
= +150°C
Collector-Emitter Cutoff Current
I
CES
100 nA
V
CES
= 60V, V
BE
= 0V
Emitter-Base Cutoff Current
I
EBO
100 nA
V
EB
= 5V, I
C
= 0A
DC Current Gain (Note 13)
h
FE
250
200
100
380
420
380



I
C
= 1mA, V
CE
= 5V
I
C
= 500mA, V
CE
= 5V
I
C
= 1A, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 13)
V
CE(sat)


60
70
100
110
140
250
mV
I
C
= 100mA, I
B
= 1mA
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Equivalent On-Resistance
R
CE
(
sat
)
100 250 mΩ
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 13)
V
BE
(
sat
)
940 1100 mV
I
C
= 1A, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 13)
V
BE
(
on
)
780 900 mV
I
C
= 1A, V
CE
= 5V
Output Capacitance
C
obo
5.5 10 pF
V
CB
= 10V, f = 1MHz
Transition Frequency
f
T
150 220
MHz
V
CE
= 10V, I
C
= 50mA
f = 100MHz
Turn-On Time
t
on
63
ns
V
CC
= 10V, I
C
= 0.5A
I
B1
= -I
B2
= 25mA
Delay Time
t
d
33
ns
Rise Time
t
r
30
ns
Turn-Off Time
t
off
420
ns
Storage Time
t
s
380
ns
Fall Time
t
f
40
ns
Notes: 13. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%
DSS4160DS
Document number DS36556 Rev. 1 – 2
5 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Typical Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical DC Current Gain vs. Collector Current
1,000
0
200
400
600
800
h,
D
C
C
U
R
R
E
N
T
G
AI
N
FE
1,000
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.1 1,000
0.001
0.01
0.1
1
V,
LLE
-EMI
E
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 10
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
0.1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V , BASE-EMI
E
-
V
L
A
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 5V
CE
0.1 10 100 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Saturation Voltage
vs. Collector Current
11,000
0
0.2
0.4
0.6
0.8
1.0
1.2
V, BASE-E
M
I
T
T
E
R
SA
T
U
R
A
T
I
O
N
V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 10
CB
/I
0
30
60
90
120
150
180
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 9 Typical Capacitance Characteristics
A
A
I
AN
E (pF)
C
ibo
C
obo
f = 1MHz
DSS4160DS
Document number DS36556 Rev. 1 – 2
6 of 7
www.diodes.com
November 2013
© Diodes Incorporated
DSS4160DS
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT26
Dim Min Max Typ
A 0.35 0.50 0.38
B 1.50 1.70 1.60
C 2.70 3.00 2.80
D
 
0.95
H 2.90 3.10 3.00
J 0.013 0.10 0.05
K 1.00 1.30 1.10
L 0.35 0.55 0.40
M 0.10 0.20 0.15

0° 8°

All Dimensions in mm
Dimensions Value (in mm)
Z 3.20
G 1.60
X 0.55
Y 0.80
C1 2.40
C2 0.95
A
M
J
L
D
B C
H
K
X
Z
Y
C1
C2
C2
G
P1-P3P4-P6P7-P7

DSS4160DS-7

Mfr. #:
Buy DSS4160DS-7
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN, NPN 60Vceo 1A 1.1W 200Hfe 150MHz
Lifecycle:
New from this manufacturer.
Delivery:
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