IRG4BC20UD-SPbF
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
200
400
600
800
1000
1 10 100
CE
C, Capacitance (pF)
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GE
ies ge gc ce
res gc
oes ce gc
C
ies
C
res
C
oes
0
4
8
12
16
20
0 5 10 15 20 25 30
GE
V , Gate-to-Emitter Voltage (V)
g
Q , Total Gate Charge (nC)
V = 400V
I = 6.5A
CE
C
0.1
1
10
-60 -40 -20 0 20 40 60 80 100 120 140 160
Total Switching Losses (mJ)
T , Junction Temperature (°C)
J
I = 13A
I = 6.5A
I = 3.3A
R = 50
Ω
V = 15V
V = 480V
C
C
C
G
GE
CC
0.29
0.30
0.31
0.32
0 102030405060
G
Total Switching Losses (mJ)
A
V = 480V
V = 15V
T = 25°C
I = 6.5A
R , Gate Resistance (
Ω
)
CC
GE
J
C
