TMP01
Rev. E | Page 9 of 20
The hysteresis current is readily calculated. For example, for
2 degrees of hysteresis, I
VREF
= 17 A. Next, the setpoint
voltages, V
SETHIGH
and V
SETLOW
, are determined using the VPTAT
scale factor of 5 mV/K = 5 mV/(°C + 273.15), which is 1.49 V
for 25°C. Then, calculate the divider resistors, based on those
setpoints. The equations used to calculate the resistors are
V
SETHIGH
= (T
SETHIGH
+ 273.15) (5 mV/°C)
V
SETLOW
= (T
SETLOW
+ 273.15) (5 mV/°C)
R1 (kΩ) = (V
VREF
V
SETHIGH
)/I
VREF
= (2.5 V − V
SETHIGH
)/I
VREF
R2 (kΩ) = (V
SETHIGH
V
SETLOW
)/I
VREF
R3 (kΩ) = V
SETLOW
/I
VREF
VPTAT
V+
1
2
3
4
8
7
6
5
TMP01
V
VREF
= 2.5V
V
SETHIGH
V
SETLOW
GND
UNDER
OVER
(V
VREF
– V
SETHIGH
)/I
VREF
= R1
(V
SETHIGH
– V
SETLOW
)/I
VREF
= R2
V
SETLOW
/I
VREF
= R3
I
VREF
00333-015
Figure 15. TMP01 Setpoint Programming
The total R1 + R2 + R3 is equal to the load resistance needed to
draw the desired hysteresis current from the reference, or I
VREF
.
The formulas shown above are also helpful in understanding
the calculation of temperature setpoint voltages in circuits other
than the standard two-temperature thermostat. If a setpoint
function is not needed, the appropriate comparator should be
disabled. SET HIGH can be disabled by tying it to V+, SET
LOW by tying it to GND. Either output can be left
unconnected.
V
PTAT
K
°C
°F
1.09 1.24 1.991.8651.741.6151.491.365
218 248 398373348323298273
–67 –25 257200 21215010050 77320
–55 –25 1251007550250–18
0
0333-016
Figure 16. Temperature—VPTAT Scale
UNDERSTANDING ERROR SOURCES
The accuracy of the VPTAT sensor output is well characterized
and specified; however, preserving this accuracy in a heating or
cooling control system requires some attention to minimizing
the various potential error sources. The internal sources of
setpoint programming error include the initial tolerances and
temperature drifts of the reference voltage VREF, the setpoint
comparator input offset voltage and bias current, and the
hysteresis current scale factor. When evaluating setpoint
programming errors, remember that any VREF error
contribution at the comparator inputs is reduced by the
resistor divider ratios. The comparator input bias current
(inputs SET HIGH, SET LOW) drops to less than 1 nA (typ)
when the comparator is tripped. This can account for some
setpoint voltage error, equal to the change in bias current times
the effective setpoint divider ladder resistance to ground.
The thermal mass of the TMP01 package and the degree of
thermal coupling to the surrounding circuitry are the largest
factors in determining the rate of thermal settling, which
ultimately determines the rate at which the desired temperature
measurement accuracy may be reached. Thus, allow sufficient
time for the device to reach the final temperature. The typical
thermal time constant for the plastic package is approximately
140 seconds in still air. Therefore, to reach the final temperature
accuracy within 1%, for a temperature change of 60 degrees, a
settling time of 5 time constants, or 12 minutes, is necessary.
The setpoint comparator input offset voltage and zero hyster-
esis current affect setpoint error. While the 7 A zero hysteresis
current allows the user to program the TMP01 with moderate
resistor divider values, it does vary somewhat from device to
device, causing slight variations in the actual hysteresis obtained
in practice. Comparator input offset directly impacts the pro-
grammed setpoint voltage and thus the resulting hysteresis
band, and must be included in error calculations.
External error sources to consider are the accuracy of the pro-
gramming resistors, grounding error voltages, and the overall
problem of thermal gradients. The accuracy of the external
programming resistors directly impacts the resulting setpoint
accuracy. Thus, in fixed-temperature applications, the user
should select resistor tolerances appropriate to the desired
programming accuracy. Resistor temperature drift must be
taken into account also. This effect can be minimized by
selecting good quality components, and by keeping all com-
ponents in close thermal proximity. Applications requiring high
measurement accuracy require great attention to detail
regarding thermal gradients. Careful circuit board layout,
component placement, and protection from stray air currents
are necessary to minimize common thermal error sources.
Also, the user should take care to keep the bottom of the set-
point programming divider ladder as close to GND (Pin 4) as
possible to minimize errors due to IR voltage drops and coup-
ling of external noise sources. In any case, a 0.1 F capacitor for
power supply bypassing is always recommended at the chip.
SAFETY CONSIDERATIONS IN HEATING AND
COOLING SYSTEM DESIGN
Designers should anticipate potential system fault conditions,
which may result in significant safety hazards, which are outside
the control of and cannot be corrected by the TMP01-based
circuit. Observe governmental and industrial regulations
regarding safety requirements and standards for such designs
where applicable.
TMP01
Rev. E | Page 10 of 20
APPLICATIONS INFORMATION
SELF-HEATING EFFECTS
In some applications, the user should consider the effects of
self-heating due to the power dissipated by the open-collector
outputs, which are capable of sinking 20 mA continuously.
Under full load, the TMP01 open-collector output device is
dissipating
P
DISS
= 0.6 V × .020A = 12 mW
which in a surface-mount SOIC package accounts for a
temperature increase due to self-heating of
T = P
DISS
× θ
JA
= .012 W × 158°C/W = 1.9°C
This self-heating effect directly affects the accuracy of the
TMP01 and will, for example, cause the device to activate
the
OVER
output 2 degrees early.
Bonding the package to a moderate heat sink limits the self-
heating effect to approximately:
T = P
DISS
× θ
JC
= .012 W × 43°C/W = 0.52°C
which is a much more tolerable error in most systems. The
VREF and VPTAT outputs are also capable of delivering
sufficient current to contribute heating effects and should not
be ignored.
BUFFERING THE VOLTAGE REFERENCE
The reference output VREF is used to generate the temper-
ature setpoint programming voltages for the TMP01 and also
to determine the hysteresis temperature band by the reference
load current I
VREF
. The on-board output buffer amplifier is
typically capable of 500 A output drive into as much as 50 pF
load (maximum). Exceeding this load affects the accuracy
of the reference voltage, could cause thermal sensing errors
due to dissipation, and may induce oscillations. Selection of
a low drift buffer functioning as a voltage follower with high
input impedance ensures optimal reference accuracy, and
does not affect the programmed hysteresis current. Amplifiers
which offer the low drift, low power consumption, and low cost
appropriate to this application include the OP295, and members
of the OP90, OP97, OP177 families, and others as shown in the
following applications circuits.
With excellent drift and noise characteristics, VREF offers a
good voltage reference for data acquisition and transducer
excitation applications as well. Output drift is typically better
than −10 ppm/°C, with 315 nV/√Hz (typ) noise spectral density
at 1 kHz.
PRESERVING ACCURACY OVER WIDE
TEMPERATURE RANGE OPERATION
The TMP01 is unique in offering both a wide range temper-
ature sensor and the associated detection circuitry needed
to implement a complete thermostatic control function in
one monolithic device. While the voltage reference, setpoint
comparators, and output buffer amplifiers have been carefully
compensated to maintain accuracy over the specified temper-
ature range, the user has an additional task in maintaining the
accuracy over wide operating temperature ranges in the
application.
Since the TMP01 is both sensor and control circuit, in many
applications it is possible that the external components used to
program and interface the device may be subjected to the same
temperature extremes. Thus, it may be necessary to locate
components in close thermal proximity to minimize large
temperature differentials, and to account for thermal drift
errors, such as resistor matching tempcos, amplifier error drift,
and the like, where appropriate. Circuit design with the TMP01
requires a slightly different perspective regarding the thermal
behavior of electronic components.
THERMAL RESPONSE TIME
The time required for a temperature sensor to settle to a speci-
fied accuracy is a function of the thermal mass of the sensor,
and the thermal conductivity between the sensor and the object
being sensed. Thermal mass is often considered equivalent to
capacitance.
Thermal conductivity is commonly specified using the symbol
Q, and can be thought of as the reciprocal of thermal resistance.
It is commonly specified in units of degrees per watt of power
transferred across the thermal joint. Thus, the time required
for the TMP01 to settle to the desired accuracy is dependent
on the package selected, the thermal contact established in that
particular application, and the equivalent power of the heat
source. In most applications, the settling time is probably best
determined empirically.
TMP01
Rev. E | Page 11 of 20
SWITCHING LOADS WITH THE OPEN-COLLECTOR
OUTPUTS
In many temperature sensing and control applications, some
type of switching is required. Whether it be to turn on a heater
when the temperature goes below a minimum value or to turn
off a motor that is overheating, the open-collector outputs
OVER
and
UNDER
can be used. For the majority of
applications, the switches used need to handle large currents on
the order of 1 A and above. Because the TMP01 is accurately
measuring temperature, the open-collector outputs should
handle less than 20 mA of current to minimize self-heating.
The
OVER
and
UNDER
outputs should not drive the equip-
ment directly. Instead, an external switching device is required
to handle the large currents. Some examples of these are relays,
power MOSFETs, thyristors, IGBTs, and Darlingtons.
Figure 17 through Figure 21 show a variety of circuits where the
TMP01 controls a switch. The main consideration in these
circuits, such as the relay in Figure 17, is the current required to
activate the switch.
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
VPTAT
1
2
3
4
8
7
6
5
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
TMP01
R1
R2
R3
MOTOR
SHUTDOWN
2604-12-311
COTO
IN4001
OR EQUIV.
12V
0
0333-017
Figure 17. Reed Relay Drive
It is important to check the particular relay to ensure that the
current needed to activate the coil does not exceed the TMP01’s
recommended output current of 20 mA. This is easily deter-
mined by dividing the relay coil voltage by the specified coil
resistance. Keep in mind that the inductance of the relay creates
large voltage spikes that can damage the TMP01 output unless
protected by a commutation diode across the coil, as shown.
The relay shown has a contact rating of 10 W maximum. If
a relay capable of handling more power is desired, the larger
contacts probably require a commensurately larger coil, with
lower coil resistance and thus higher trigger current. As the
contact power handling capability increases, so does the current
needed for the coil. In some cases, an external driving transistor
should be used to remove the current load on the TMP01.
Power FETs are popular for handling a variety of high current
dc loads. Figure 18 shows the TMP01 driving a p-channel
MOSFET transistor for a simple heater circuit. When the out-
put transistor turns on, the gate of the MOSFET is pulled down
to approximately 0.6 V, turning it on. For most MOSFETs, a
gate-to-source voltage, or Vgs, on the order of −2 V to −5 V
is sufficient to turn the device on.
Figure 19 shows a similar circuit for turning on an n-channel
MOSFET, except that now the gate to source voltage is positive.
For this reason, an external transistor must be used as an
inverter so that the MOSFET turns on when the
UNDER
output pulls down.
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
VPTAT
1
2
3
4
8
7
6
5
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
NC = NO CONNECT
TMP01
R1
R2
R3
NC
NC
IRFR9024
OR EQUIV.
HEATING
ELEMENT
2.4k (12V)
1.2k (6V)
5%
V+
+
00333-018
Figure 18. Driving a P-Channel MOSFET
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
VPTAT
1
2
3
4
8
7
6
5
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
NC = NO CONNECT
TMP01
R1
R2
R3
NC
NC
IRF130
2N1711
4.7k
V+
4.7k
HEATING
ELEMENT
00333-019
Figure 19. Driving an N-Channel MOSFET
Isolated gate bipolar transistors (IGBT) combine many of the
benefits of power MOSFETs with bipolar transistors, and are
used for a variety of high power applications. Because IGBTs
have a gate similar to MOSFETs, turning on and off the devices
is relatively simple as shown in Figure 20.
The turn-on voltage for the IGBT shown (IRGBC40S) is
between 3.0 V and 5.5 V. This part has a continuous collector
current rating of 50 A and a maximum collector-to-emitter
voltage of 600 V, enabling it to work in very demanding
applications.
TEMPERATURE
SENSOR AND
VOLTAGE
REFERENCE
VREF
VPTAT
1
2
3
4
8
7
6
5
HYSTERESIS
GENERATOR
WINDOW
COMPARATOR
NC = NO CONNECT
TMP01
R1
R2
R3
NC
NC
IRGBC40S
2N1711
4.7k
V+
4.7k
MOTOR
CONTROL
00333-020
Figure 20. Driving an IGBT

TMP01FSZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Board Mount Temperature Sensors Lo Pwr Prog Cntlr SGL Supply 4.5-13.2V
Lifecycle:
New from this manufacturer.
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