IXFV15N100P Datasheet IXFH15N100P, IXFV15N100PS, IXFV15N100P | P1-P3

DS99891A(4/08)

V

DSS

= 1000V

I

D25

= 15A

R

DS(on)

≤≤

≤ 760m

ΩΩ

Ω

t

rr

≤≤

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Features

z

International standard packages

z

Fast recovery diode

z

Unclamped Inductive Switching (UIS)

rated

z

Low package inductance

- easy to drive and to protect

Advantages

z

Easy to mount

z

Space savings

z

High power density

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C 1000 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ 1000 V

V

GSS

Continuous ± 30 V

V

GSM

Transient ± 40 V

I

D25

T

C

= 25°C15A

I

DM

T

C

= 25°C, pulse width limited by T

JM

40 A

I

AR

T

C

= 25°C 7.5 A

E

AS

T

C

= 25°C 500 mJ

dV/dt I

S

≤ I

DM

, V

DD

≤ V

DSS

,T

J

≤ 150°C 15 V/ns

P

D

T

C

= 25°C 543 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

Maximum lead temperature for soldering 300 °C

T

SOLD

Plastic body for 10s 260 °C

M

d

Mounting torque (TO-247) 1.13/10 Nm/lb.in.

F

C

Mounting force (PLUS 220) 11..65/2.5..14.6 N/lb.

Weight TO-247 6 g

PLUS 220 types 4 g

G = Gate D = Drain

S = Source TAB = Drain

IXFH15N100P

IXFV15N100P

IXFV15N100PS

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= 1mA 1000 V

V

GS(th)

V

DS

= V

GS

, I

D

= 1mA 3.5 6.5 V

I

GSS

V

GS

= ± 30V, V

DS

= 0V ± 100 nA

I

DSS

V

DS

= V

DSS

25 μA

V

GS

= 0V T

J

= 125°C 1.0 mA

R

DS(on)

V

GS

= 10V, I

D

= 0.5 • I

D25

, Note 1 670 760 mΩ

Applications:

z

Switched-mode and resonant-mode

power supplies

z

DC-DC Converters

z

Laser Drivers

z

AC and DC motor controls

z

Robotics and servo controls

Polar

TM

Power MOSFET

HiPerFET

TM

G

S

D (TAB)

PLUS220SMD (IXFV_S)

TO-247 (IXFH)

PLUS220 (IXFV)

G

D

S

D (TAB)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH15N100P IXFV15N100P

IXFV15N100PS

Symbol Test Conditions Characteristic Values

(T

J

= 25°C unless otherwise specified) Min. Typ. Max.

g

fs

V

DS

= 20V, I

D

= 0.5 • I

D25

, Note 1 6.5 10.5 S

C

iss

5140 pF

C

oss

V

GS

= 0V, V

DS

= 25V, f = 1MHz 322 pF

C

rss

43 pF

R

Gi

Gate input resistance 1.20 Ω

t

d(on)

41 ns

t

r

44 ns

t

d(off)

44 ns

t

f

58 ns

Q

g(on)

97 nC

Q

gs

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

38 nC

Q

gd

42 nC

R

thJC

0.23 °C/W

R

thCS

(TO-247, PLUS220) 0.21 °C/W

Source-Drain Diode Characteristic Values

T

J

= 25°C unless otherwise specified) Min. Typ. Max.

I

S

V

GS

= 0V 15 A

I

SM

Repetitive 60 A

V

SD

I

F

= I

S

, V

GS

= 0V, Note 1 1.5 V

t

rr

300 ns

Q

RM

0.6 μC

I

RM

7 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

I

F

= 7.5A, -di/dt = 100A/μs

V

R

= 100V, V

GS

= 0V

Resistive Switching Times

V

GS

= 10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 2Ω (External)

TO-247 (IXFH) Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A

1

2.2 2.54 .087 .102

A

2

2.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b

1

1.65 2.13 .065 .084

b

2

2.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

e

∅ P

PLUS220 (IXFV) Outline

PLUS220SMD (IXFV_S) Outline

IXFH15N100P IXFV15N100P

IXFV15N100PS

Fig. 1. Output Characteristics

@ 25ºC

0

2

4

6

8

10

12

14

16

024681012

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

8V

7V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

3

6

9

12

15

18

21

24

27

30

0 3 6 9 12 15 18 21 24 27 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

8V

9V

Fig. 3. Output Characteristics

@ 125ºC

0

2

4

6

8

10

12

14

16

0 2 4 6 8 101214161820222426

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

9V

6V

7V

8V

Fig. 4. R

DS(on)

Normalized to I

D

= 7.5A Value

vs. Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 15A

I

D

= 7.5A

Fig. 5. R

DS(on)

Normalized to I

D

= 7.5A Value

vs. Drain Current

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

0 3 6 9 12 15 18 21 24 27 30

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

2

4

6

8

10

12

14

16

-50-250 255075100125150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFV15N100P

IXFV15N100P

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