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SFP9640

P1-P3P4-P6P7-P7
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : -10 µA (Max.) @ V
DS
= -200V
Low R
DS(ON)
: 0.344 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
R
θJC
R
θCS
R
θJA
o
C/W
Characteristic Max. UnitsSymbol Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
o
C)
Continuous Drain Current (T
C
=100
o
C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
C
=25
o
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 “ from case for 5-seconds
Characteristic Value UnitsSymbol
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
o
C
A
o
C
V
DSS
V
TO-220
1.Gate 2. Drain 3. Source
3
2
1
O
1
O
2
O
3
O
1
O
1
SFP9640
BV
DSS
= -200 V
R
DS(on)
= 0.5 Ω
I
D
= -11 A
-200
-11
-7.0
-44
807
-11
12.3
-5.0
123
0.98
- 55 to +150
300
1.02
--
62.5
--
0.5
--
30
+
_
©1999 Fairchild Semiconductor Corporation
Rev. B
P-CHANNEL
POWER MOSFET
Electrical Characteristics (T
C
=25
o
C unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
CharacteristicSymbol
Max. UnitsTyp.Min. Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “ Miller “ ) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
BV
DSS
∆BV/∆T
J
V
GS(th)
R
DS(on)
I
GSS
I
DSS
V
V/
o
C
V
nA
µA
Ω
Ω
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=-250µA
I
D
=-250µA See Fig 7
V
DS
=-5V,I
D
=-250µA
V
GS
=-30V
V
GS
=30V
V
DS
=-200V
V
DS
=-160V,T
C
=125
o
C
V
GS
=-10V,I
D
=-5.5A
V
DS
=-40V,I
D
=-5.5A
V
DD
=-100V,I
D
=-11A,
R
G
=9.1Ω
See Fig 13
V
DS
=-160V,V
GS
=-10V,
I
D
=-11A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=-25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
--
--
--
--
--
A
V
ns
µC
Integral reverse pn-diode
in the MOSFET
T
J
=25
o
C,I
S
=-11A,V
GS
=0V
T
J
=25
o
C,I
F
=-11A
di
F
/dt=100A/µs
O
4
O
4
O
5
O
4
O
4
O
5
O
1
O
4
O
4
SFP9640
-200
--
-2.0
--
--
--
--
--
-0.16
--
--
--
--
--
207
81
16
23
54
19
46
9.2
22.9
--
--
-4.0
-100
100
-10
-100
0.5
--
1585
310
120
40
55
115
50
59
--
--
6.5
1220
--
--
--
180
1.24
-11
-44
-5.0
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=10mH, I
AS
=-11A, V
DD
=-50V, R
G
=27Ω*, Starting T
J
=25
o
C
I
SD
-11A, di/dt 450A/µs, V
DD
BV
DSS
, Starting T
J
=25
o
C
Pulse Test : Pulse Width = 250 µs, Duty Cycle 2%
Essentially Independent of Operating Temperature
<
_
<
_
<
_
<
_
O
1
O
2
O
3
O
4
O
5
P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current
SFP9640
10
-1
10
0
10
1
10
-1
10
0
10
1
@ Notes :
1. 250
µ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : - 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5 V
-I
D
, Drain Current [A]
-V
DS
, Drain-Source Voltage [V]
2 4 6 8 10
10
-1
10
0
10
1
25
o
C
150
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= -40 V
3. 250
µ
s Pulse Test
-I
D
, Drain Current [A]
-V
GS
, Gate-Source Voltage [V]
0 7 14 21 28 35 42
0.00
0.25
0.50
0.75
1.00
1.25
1.50
@ Note : T
J
= 25
o
C
V
GS
= -20 V
V
GS
= -10 V
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
-I
D
, Drain Current [A]
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
10
-1
10
0
10
1
150
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
µ
s Pulse Test
-I
DR
, Reverse Drain Current [A]
-V
SD
, Source-Drain Voltage [V]
0 10 20 30 40 50
0
5
10
V
DS
= -160 V
V
DS
= -100 V
V
DS
= -40 V
@ Notes : I
D
=-11 A
-V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
10
0
10
1
0
500
1000
1500
2000
2500
C
iss
= C
gs
+ C
gd
( C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance [pF]
-V
DS
, Drain-Source Voltage [V]
P1-P3P4-P6P7-P7

SFP9640

Mfr. #:
Buy SFP9640
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 200V 11A TO-220
Lifecycle:
New from this manufacturer.
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