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J108,126

P1-P3P4-P6P7-P7
1996 Jul 30 4
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
DYNAMIC CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
Note
1. Test conditions for switching times are as follows:
V
DD
= 1.5 V; V
GS
= 0 to V
GSoff
(all types)
V
GSoff
= −12 V; R
L
= 100 Ω (J108)
V
GSoff
= −7 V; R
L
= 100 Ω (J109)
V
GSoff
= −5 V; R
L
= 100 Ω (J110).
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
is
input capacitance V
DS
= 0; V
GS
= −10 V; f = 1 MHz 15 30 pF
V
DS
= 0; V
GS
= 0; f = 1 MHz;
T
amb
=25°C
50 85 pF
C
rs
reverse transfer capacitance V
DS
= 0; V
GS
= −10 V; f = 1 MHz 8 15 pF
Switching times; see Fig.2
t
d
delay time note 1 2 − ns
t
on
turn-on time 4 − ns
t
s
storage time 4 − ns
t
off
turn-off time 6 − ns
Fig.2 Switching circuit.
handbook, halfpage
MGE773
R
L
50 Ω
DUT
SAMPLING
SCOPE
50 Ω
50 Ω
0.1 µF
10 µF
10 nF
V
DD
1996 Jul 30 5
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
Fig.3 Input and output waveforms.
handbook, full pagewidth
MGE774
V
GS off
t
off
t
f
t
s
V
GS
= 0 V
V
i
V
o
10%
90%
90%
10%
t
on
t
d
t
r
1996 Jul 30 6
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
PACKAGE OUTLINE
Fig.4 TO-92 (SOT54).
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
a
ndbook, full pagewidth
MBC014 - 1
2.54
4.8
max
4.2 max
1.7
1.4
0.66
0.56
1
2
3
5.2 max 12.7 min
2.0 max
(1)
0.48
0.40
0.40
min
P1-P3P4-P6P7-P7

J108,126

Mfr. #:
Buy J108,126
Manufacturer:
NXP Semiconductors
Description:
RF JFET Transistors N-Channel Single '+/- 25V 80mA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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