1996 Jul 30 3
Philips Semiconductors Product specification
N-channel silicon junction FETs J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
T
j
=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source voltage −±25 V
V
GSO
gate-source voltage open drain −−25 V
V
GDO
gate-drain voltage open source −−25 V
I
G
forward gate current (DC) − 50 mA
P
tot
total power dissipation up to T
amb
=50°C − 400 mW
T
stg
storage temperature −65 150 °C
T
j
operating junction temperature − 150 °C
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient 250 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)GSS
gate-source breakdown voltage I
G
= −1 µA; V
DS
=0 −−−25 V
V
GSoff
gate-source cut-off voltage I
D
=1µA; V
DS
=5V V
J108 −3 −−10 V
J109 −2 −−6V
J110 −0.5 −−4V
I
DSS
drain current V
GS
= 0; V
DS
=15V
J108 80 −−mA
J109 40 −−mA
J110 10 −−mA
I
GSS
gate leakage current V
GS
= −15 V; V
DS
=0 −−−3nA
I
DSX
drain-source cut-off current V
GS
= −10 V; V
DS
=5V −−3nA
R
DSon
drain-source on-state resistance V
GS
= 0; V
DS
= 100 mV
J108 −−8Ω
J109 −−12 Ω
J110 −−18 Ω
