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SE20AFB-M3/6B

P1-P3P4-P5
SE20AFB, SE20AFD, SE20AFG, SE20AFJ
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jul-15
1
Document Number: 89954
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount ESD Capability Rectifiers
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Mounted on 5.0 mm x 5.0 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
100 V, 200 V, 400 V, 600 V
I
FSM
35 A
V
F
at I
F
= 2.0 A (T
A
= 125 °C) 0.86 V
I
R
5 µA
T
J
max. 175 °C
Package DO-221AC (SlimSMA)
Diode variations Single die
DO-221AC
SlimSMA
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SE20AFB SE20AFD SE20AFG SE20AFJ UNIT
Device marking code S2B S2D S2G S2J
Maximum repetitive peak reverse voltage V
RRM
100 200 400 600 V
Maximum DC forward current
I
F
(1)
2.0
A
I
F
(2)
1.3
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
I
FSM
35 A
Operating junction and storage temperature range T
J
, T
STG
-55 to +175 °C
SE20AFB, SE20AFD, SE20AFG, SE20AFJ
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jul-15
2
Document Number: 89954
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 5.0 mm x 5.0 mm pad areas, 2 oz. FR4 PCB; R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.0 A
T
A
= 25 °C
V
F
(1)
0.91 -
V
I
F
= 2.0 A 0.96 1.1
I
F
= 1.0 A
T
A
= 125 °C
0.79 -
I
F
= 2.0 A 0.86 0.98
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-5.0
µA
T
A
= 125 °C 8 100
Typical reverse recovery time I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A t
rr
1.2 - µs
Typical junction capacitance 4.0 V, 1 MHz C
J
12 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °c unless otherwise noted)
PARAMETER SYMBOL SE20AFB SE20AFD SE20AFG SE20AFJ UNIT
Typical thermal resistance
R
JA
(1)
125
°C/W
R
JM
(2)
12
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD TEST TYPE TEST CONDITIONS SYMBOL CLASS VALUE
AEC-Q101-001 Human body model (contact mode) C = 100 pF, R = 1.5 k V
C
H3B > 8 kV
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
SE20AFJ-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel
SE20AFJ-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel
SE20AFJHM3/6A
(1)
0.032 6A 3500 7" diameter plastic tape and reel
SE20AFJHM3/6B
(1)
0.032 6B 14 000 13" diameter plastic tape and reel
SE20AFB, SE20AFD, SE20AFG, SE20AFJ
www.vishay.com
Vishay General Semiconductor
Revision: 27-Jul-15
3
Document Number: 89954
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Junction Capacitance
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 25 50 75 100 125 150 175
DC Forward Current (A)
Mount Temperature (°C)
T
M
measured at cathode band
terminal PCB mount
T
M
= 152 °C, R
thJM
= 12 °C/W
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0 0.4 0.8 1.2 1.6 2 2.4
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
0.1
1
10
100
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
= 150 °C
= 25 °C
= 75 °C
T
A
= 125 °C
T
A
= 175 °C
T
A
T
A
T
A
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (µA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 75 °C
T
A
= 25 °C
T
A
= 175 °C
1
10
100
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
si
g
= 50 mV
p
-
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
P1-P3P4-P5

SE20AFB-M3/6B

Mfr. #:
Buy SE20AFB-M3/6B
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2 Amp 100 volts ESD PROTECTION 13in
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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